ETCHING SOLUTION and etching method FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN

Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution f...

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Hauptverfasser: OKABE, SATOSHI, MARUYAMA, TAKETO, MATSUBARA, MASAHIDE, NARITA, KAZUYO, ADANIYA, TOMOYUKI
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Sprache:eng ; fre ; ger
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creator OKABE, SATOSHI
MARUYAMA, TAKETO
MATSUBARA, MASAHIDE
NARITA, KAZUYO
ADANIYA, TOMOYUKI
description Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.
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language eng ; fre ; ger
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
title ETCHING SOLUTION and etching method FOR MULTILAYER THIN FILM HAVING COPPER LAYER AND MOLYBDENUM LAYER CONTAINED THEREIN
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