SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY

A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from wh...

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Hauptverfasser: VEERARAGHAVAN, Sathish, SINHA, Jaydeep K
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creator VEERARAGHAVAN, Sathish
SINHA, Jaydeep K
description A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2526409A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2526409A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2526409A43</originalsourceid><addsrcrecordid>eNqNyr8KwjAQgPEsDqK-w72AILUKjtfkYgMlV5NroVMpEifRQn1_FP_sTt_w_eYqRScEBUYycGrQi7NOozj2wBZiU0QJ-BLCNR8D1mUH6A04iRCo-kBhqJyUv2_Ism7i23FLocJuqWaX4Tql1bcLBZZEl-s03vs0jcM53dKjpzrbZft8c8B8-wd5AkBBNLE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY</title><source>esp@cenet</source><creator>VEERARAGHAVAN, Sathish ; SINHA, Jaydeep K</creator><creatorcontrib>VEERARAGHAVAN, Sathish ; SINHA, Jaydeep K</creatorcontrib><description>A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.</description><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CALCULATING ; CINEMATOGRAPHY ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171004&amp;DB=EPODOC&amp;CC=EP&amp;NR=2526409A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171004&amp;DB=EPODOC&amp;CC=EP&amp;NR=2526409A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VEERARAGHAVAN, Sathish</creatorcontrib><creatorcontrib>SINHA, Jaydeep K</creatorcontrib><title>SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY</title><description>A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CALCULATING</subject><subject>CINEMATOGRAPHY</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr8KwjAQgPEsDqK-w72AILUKjtfkYgMlV5NroVMpEifRQn1_FP_sTt_w_eYqRScEBUYycGrQi7NOozj2wBZiU0QJ-BLCNR8D1mUH6A04iRCo-kBhqJyUv2_Ism7i23FLocJuqWaX4Tql1bcLBZZEl-s03vs0jcM53dKjpzrbZft8c8B8-wd5AkBBNLE</recordid><startdate>20171004</startdate><enddate>20171004</enddate><creator>VEERARAGHAVAN, Sathish</creator><creator>SINHA, Jaydeep K</creator><scope>EVB</scope></search><sort><creationdate>20171004</creationdate><title>SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY</title><author>VEERARAGHAVAN, Sathish ; SINHA, Jaydeep K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2526409A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CALCULATING</topic><topic>CINEMATOGRAPHY</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>VEERARAGHAVAN, Sathish</creatorcontrib><creatorcontrib>SINHA, Jaydeep K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VEERARAGHAVAN, Sathish</au><au>SINHA, Jaydeep K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY</title><date>2017-10-04</date><risdate>2017</risdate><abstract>A method and system for modeling and analyzing wafer nanotopography data utilizes a nonlinear contact finite element model. Inputs to the model include lithography chuck parameters and site-based geometry data. Outputs from the model include in-plane distortions and out-of-plane distortions, from which defocus and overlay can be derived.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title SITE BASED QUANTIFICATION OF SUBSTRATE TOPOGRAPHY AND ITS RELATION TO LITHOGRAPHY DEFOCUS AND OVERLAY
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T20%3A32%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=VEERARAGHAVAN,%20Sathish&rft.date=2017-10-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2526409A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true