DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON, AND METHOD FOR CONTROLLING THE TEMPERATURE THEREIN

A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral indu...

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Bibliographische Detailangaben
Hauptverfasser:	FORZAN, MICHELE, BECHINI, ROBERTO, CISCATO, DARIO, DUGHIERO, FABRIZIO, CESANO, MARIOLINO, CRIVELLO, FABRIZIO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY CRYSTAL GROWTH ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING METALLURGY OPEN SINTERING OR LIKE APPARATUS OVENS PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RETORTS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS
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