DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON, AND METHOD FOR CONTROLLING THE TEMPERATURE THEREIN
A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral indu...
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| creator | FORZAN, MICHELE BECHINI, ROBERTO CISCATO, DARIO DUGHIERO, FABRIZIO CESANO, MARIOLINO CRIVELLO, FABRIZIO |
| description | A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil, set around a side wall of the graphite container, and a bottom induction coil, set facing a bottom wall of the graphite container and vertically mobile for varying the distance from the bottom wall; and first means for a.c. electrical supply of the induction coils separately from one another, and second means for supply of a coolant within respective hollow turns of the induction coils; the bottom induction coil includes four spiral windings, arranged alongside one another; electrical switching means enable in use selective connection of the four windings to one another according to different configurations. |
| format | Patent |
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fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BLASTING ; CASTING ; CASTING OF METALS ; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FURNACES ; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL ; HEATING ; KILNS ; LIGHTING ; MECHANICAL ENGINEERING ; METALLURGY ; OPEN SINTERING OR LIKE APPARATUS ; OVENS ; PERFORMING OPERATIONS ; POWDER METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; RETORTS ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TRANSPORTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; WEAPONS</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120829&DB=EPODOC&CC=EP&NR=2491168A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120829&DB=EPODOC&CC=EP&NR=2491168A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FORZAN, MICHELE</creatorcontrib><creatorcontrib>BECHINI, ROBERTO</creatorcontrib><creatorcontrib>CISCATO, DARIO</creatorcontrib><creatorcontrib>DUGHIERO, FABRIZIO</creatorcontrib><creatorcontrib>CESANO, MARIOLINO</creatorcontrib><creatorcontrib>CRIVELLO, FABRIZIO</creatorcontrib><title>DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON, AND METHOD FOR CONTROLLING THE TEMPERATURE THEREIN</title><description>A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil, set around a side wall of the graphite container, and a bottom induction coil, set facing a bottom wall of the graphite container and vertically mobile for varying the distance from the bottom wall; and first means for a.c. electrical supply of the induction coils separately from one another, and second means for supply of a coolant within respective hollow turns of the induction coils; the bottom induction coil includes four spiral windings, arranged alongside one another; electrical switching means enable in use selective connection of the four windings to one another according to different configurations.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BLASTING</subject><subject>CASTING</subject><subject>CASTING OF METALS</subject><subject>CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC HEATING</subject><subject>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FURNACES</subject><subject>FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL</subject><subject>HEATING</subject><subject>KILNS</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>METALLURGY</subject><subject>OPEN SINTERING OR LIKE APPARATUS</subject><subject>OVENS</subject><subject>PERFORMING OPERATIONS</subject><subject>POWDER METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>RETORTS</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TRANSPORTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzD0KwkAQBeA0FqLeYQ4Qi6iIluNmTAb2J0xmBSsRWStRIV7CW5uIB7B6vMfHG2fvkg5sCPZBIOwU2bOvAMFFq2zk2Cpay56gJccm-DIa7alDJWG0ObCHBqW30aJAy3ZQOaAvwZHWofxe95tKGJ4q0JpAyTUkqFFo6ELsp9noer51afbLSQZ7UlPP0_NxSt3zfEn39DpRs1hti2K9wWL5B_kAPc8-hw</recordid><startdate>20120829</startdate><enddate>20120829</enddate><creator>FORZAN, MICHELE</creator><creator>BECHINI, ROBERTO</creator><creator>CISCATO, DARIO</creator><creator>DUGHIERO, FABRIZIO</creator><creator>CESANO, MARIOLINO</creator><creator>CRIVELLO, FABRIZIO</creator><scope>EVB</scope></search><sort><creationdate>20120829</creationdate><title>DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON, AND METHOD FOR CONTROLLING THE TEMPERATURE THEREIN</title><author>FORZAN, MICHELE ; BECHINI, ROBERTO ; CISCATO, DARIO ; DUGHIERO, FABRIZIO ; CESANO, MARIOLINO ; CRIVELLO, FABRIZIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2491168A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BLASTING</topic><topic>CASTING</topic><topic>CASTING OF METALS</topic><topic>CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC HEATING</topic><topic>ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FURNACES</topic><topic>FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL</topic><topic>HEATING</topic><topic>KILNS</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>METALLURGY</topic><topic>OPEN SINTERING OR LIKE APPARATUS</topic><topic>OVENS</topic><topic>PERFORMING OPERATIONS</topic><topic>POWDER METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>RETORTS</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TRANSPORTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>FORZAN, MICHELE</creatorcontrib><creatorcontrib>BECHINI, ROBERTO</creatorcontrib><creatorcontrib>CISCATO, DARIO</creatorcontrib><creatorcontrib>DUGHIERO, FABRIZIO</creatorcontrib><creatorcontrib>CESANO, MARIOLINO</creatorcontrib><creatorcontrib>CRIVELLO, FABRIZIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FORZAN, MICHELE</au><au>BECHINI, ROBERTO</au><au>CISCATO, DARIO</au><au>DUGHIERO, FABRIZIO</au><au>CESANO, MARIOLINO</au><au>CRIVELLO, FABRIZIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON, AND METHOD FOR CONTROLLING THE TEMPERATURE THEREIN</title><date>2012-08-29</date><risdate>2012</risdate><abstract>A device for obtaining multicrystalline silicon, including: at least one crucible made of quartz for the silicon, removably housed in a cup-shaped graphite container; a fluid-tight openable casing; a top induction coil, set facing, with interposition of a graphite plate, the crucible, a lateral induction coil, set around a side wall of the graphite container, and a bottom induction coil, set facing a bottom wall of the graphite container and vertically mobile for varying the distance from the bottom wall; and first means for a.c. electrical supply of the induction coils separately from one another, and second means for supply of a coolant within respective hollow turns of the induction coils; the bottom induction coil includes four spiral windings, arranged alongside one another; electrical switching means enable in use selective connection of the four windings to one another according to different configurations.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY CRYSTAL GROWTH ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL HEATING KILNS LIGHTING MECHANICAL ENGINEERING METALLURGY OPEN SINTERING OR LIKE APPARATUS OVENS PERFORMING OPERATIONS POWDER METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RETORTS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS |
| title | DEVICE FOR OBTAINING A MULTICRYSTALLINE SEMICONDUCTOR MATERIAL, IN PARTICULAR SILICON, AND METHOD FOR CONTROLLING THE TEMPERATURE THEREIN |
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