METHOD FOR CUTTING OBJECT TO BE PROCESSED

A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAWAGUCHI Daisuke, SHIMOI Hideki, UCHIYAMA Naoki
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
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