METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE

A method of manufacturing a semiconductor optical device including a semiconductor layer according to the invention includes: forming a first dielectric film on a first region of a surface of a semiconductor laminated structure (10); forming a second dielectric film on a second region of the surface...

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description A method of manufacturing a semiconductor optical device including a semiconductor layer according to the invention includes: forming a first dielectric film on a first region of a surface of a semiconductor laminated structure (10); forming a second dielectric film on a second region of the surface of the semiconductor laminated structure (10), the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a temperature range in which bandgap variation due to the thermal treatment in the semiconductor layer below the second dielectric film is larger than bandgap variation due to the thermal treatment in the semiconductor layer below the first dielectric film to form a window region (23) in the semiconductor laminated structure (10) below the first dielectric film.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2453535A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2453535A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2453535A13</originalsourceid><addsrcrecordid>eNrjZJjq6xri4e-i4OYfpODr6Bfq5ugcEhrk6eeuEOzq6-ns7-cS6hwClPMPCPF0dvRRcHEN83R21VEgUZuPY7BrkIKrj6uvq1-IjoKjnwte83kYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSbxrgJGJqTEQOhoaE6EEAFitQd8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE</title><source>esp@cenet</source><creator>TANIGUCHI, HIDEHIRO</creator><creatorcontrib>TANIGUCHI, HIDEHIRO</creatorcontrib><description>A method of manufacturing a semiconductor optical device including a semiconductor layer according to the invention includes: forming a first dielectric film on a first region of a surface of a semiconductor laminated structure (10); forming a second dielectric film on a second region of the surface of the semiconductor laminated structure (10), the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a temperature range in which bandgap variation due to the thermal treatment in the semiconductor layer below the second dielectric film is larger than bandgap variation due to the thermal treatment in the semiconductor layer below the first dielectric film to form a window region (23) in the semiconductor laminated structure (10) below the first dielectric film.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120516&amp;DB=EPODOC&amp;CC=EP&amp;NR=2453535A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120516&amp;DB=EPODOC&amp;CC=EP&amp;NR=2453535A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANIGUCHI, HIDEHIRO</creatorcontrib><title>METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE</title><description>A method of manufacturing a semiconductor optical device including a semiconductor layer according to the invention includes: forming a first dielectric film on a first region of a surface of a semiconductor laminated structure (10); forming a second dielectric film on a second region of the surface of the semiconductor laminated structure (10), the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a temperature range in which bandgap variation due to the thermal treatment in the semiconductor layer below the second dielectric film is larger than bandgap variation due to the thermal treatment in the semiconductor layer below the first dielectric film to form a window region (23) in the semiconductor laminated structure (10) below the first dielectric film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJjq6xri4e-i4OYfpODr6Bfq5ugcEhrk6eeuEOzq6-ns7-cS6hwClPMPCPF0dvRRcHEN83R21VEgUZuPY7BrkIKrj6uvq1-IjoKjnwte83kYWNMSc4pTeaE0N4OCm2uIs4duakF-fGpxQWJyal5qSbxrgJGJqTEQOhoaE6EEAFitQd8</recordid><startdate>20120516</startdate><enddate>20120516</enddate><creator>TANIGUCHI, HIDEHIRO</creator><scope>EVB</scope></search><sort><creationdate>20120516</creationdate><title>METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE</title><author>TANIGUCHI, HIDEHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2453535A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>TANIGUCHI, HIDEHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANIGUCHI, HIDEHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE</title><date>2012-05-16</date><risdate>2012</risdate><abstract>A method of manufacturing a semiconductor optical device including a semiconductor layer according to the invention includes: forming a first dielectric film on a first region of a surface of a semiconductor laminated structure (10); forming a second dielectric film on a second region of the surface of the semiconductor laminated structure (10), the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a temperature range in which bandgap variation due to the thermal treatment in the semiconductor layer below the second dielectric film is larger than bandgap variation due to the thermal treatment in the semiconductor layer below the first dielectric film to form a window region (23) in the semiconductor laminated structure (10) below the first dielectric film.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL LASER ELEMENT, AND SEMICONDUCTOR OPTICAL DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T21%3A50%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANIGUCHI,%20HIDEHIRO&rft.date=2012-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2453535A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true