METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES

METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES

The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semicond...

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Hauptverfasser: MEYER, KARSTEN, WEIS, MATHIAS, LOSSEN, JAN, WUETHERICH, TOBIAS
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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creator MEYER, KARSTEN
WEIS, MATHIAS
LOSSEN, JAN
WUETHERICH, TOBIAS
description The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2404322A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2404322A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2404322A23</originalsourceid><addsrcrecordid>eNrjZHD1dQ3x8HdRcPMPUggI8ncJdfb0c1cIdvX1dPb3A_JCgOLO_r4B_n6ufiHBCqHBIGkX_wAQFeLq7OHnGRjqGszDwJqWmFOcyguluRkU3FxDnD10Uwvy41OLCxKTU_NSS-JdA4xMDEyMjYwcjYyJUAIAZUMsEA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES</title><source>esp@cenet</source><creator>MEYER, KARSTEN ; WEIS, MATHIAS ; LOSSEN, JAN ; WUETHERICH, TOBIAS</creator><creatorcontrib>MEYER, KARSTEN ; WEIS, MATHIAS ; LOSSEN, JAN ; WUETHERICH, TOBIAS</creatorcontrib><description>The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120111&amp;DB=EPODOC&amp;CC=EP&amp;NR=2404322A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120111&amp;DB=EPODOC&amp;CC=EP&amp;NR=2404322A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MEYER, KARSTEN</creatorcontrib><creatorcontrib>WEIS, MATHIAS</creatorcontrib><creatorcontrib>LOSSEN, JAN</creatorcontrib><creatorcontrib>WUETHERICH, TOBIAS</creatorcontrib><title>METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES</title><description>The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD1dQ3x8HdRcPMPUggI8ncJdfb0c1cIdvX1dPb3A_JCgOLO_r4B_n6ufiHBCqHBIGkX_wAQFeLq7OHnGRjqGszDwJqWmFOcyguluRkU3FxDnD10Uwvy41OLCxKTU_NSS-JdA4xMDEyMjYwcjYyJUAIAZUMsEA</recordid><startdate>20120111</startdate><enddate>20120111</enddate><creator>MEYER, KARSTEN</creator><creator>WEIS, MATHIAS</creator><creator>LOSSEN, JAN</creator><creator>WUETHERICH, TOBIAS</creator><scope>EVB</scope></search><sort><creationdate>20120111</creationdate><title>METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES</title><author>MEYER, KARSTEN ; WEIS, MATHIAS ; LOSSEN, JAN ; WUETHERICH, TOBIAS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2404322A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MEYER, KARSTEN</creatorcontrib><creatorcontrib>WEIS, MATHIAS</creatorcontrib><creatorcontrib>LOSSEN, JAN</creatorcontrib><creatorcontrib>WUETHERICH, TOBIAS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MEYER, KARSTEN</au><au>WEIS, MATHIAS</au><au>LOSSEN, JAN</au><au>WUETHERICH, TOBIAS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES</title><date>2012-01-11</date><risdate>2012</risdate><abstract>The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS USING DOPING TECHNIQUES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T17%3A52%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MEYER,%20KARSTEN&rft.date=2012-01-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2404322A2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true