Vertical PIN diodes and method of manufacturing them

The invention concerns a method of manufacturing a vertical PIN diode (30) comprising: providing an epitaxial wafer comprising a vertically stacked N-type layer (32), intrinsic layer (33) and P-type layer (34); forming an anode contact of the vertical PIN diode (30) by forming an anode metallization...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PERONI, MARCO, PANTELLINI, ALESSIO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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