A camera
A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in t...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Mabuchi, Keiji |
description | A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to 1/2, and preferably less than or equal to 1/5 of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2378764B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2378764B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2378764B13</originalsourceid><addsrcrecordid>eNrjZOBwVEhOzE0tSuRhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUbG5hbmZiZOhsZEKAEAGWgbbQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>A camera</title><source>esp@cenet</source><creator>Mabuchi, Keiji</creator><creatorcontrib>Mabuchi, Keiji</creatorcontrib><description>A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to 1/2, and preferably less than or equal to 1/5 of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201118&DB=EPODOC&CC=EP&NR=2378764B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201118&DB=EPODOC&CC=EP&NR=2378764B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mabuchi, Keiji</creatorcontrib><title>A camera</title><description>A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to 1/2, and preferably less than or equal to 1/5 of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBwVEhOzE0tSuRhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUbG5hbmZiZOhsZEKAEAGWgbbQ</recordid><startdate>20201118</startdate><enddate>20201118</enddate><creator>Mabuchi, Keiji</creator><scope>EVB</scope></search><sort><creationdate>20201118</creationdate><title>A camera</title><author>Mabuchi, Keiji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2378764B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Mabuchi, Keiji</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mabuchi, Keiji</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A camera</title><date>2020-11-18</date><risdate>2020</risdate><abstract>A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to 1/2, and preferably less than or equal to 1/5 of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP2378764B1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
title | A camera |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T13%3A36%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Mabuchi,%20Keiji&rft.date=2020-11-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2378764B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |