WORD LINE VOLTAGE CONTROL IN STT-MRAM

WORD LINE VOLTAGE CONTROL IN STT-MRAM

Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a wor...

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Hauptverfasser: SANI, MEHDI HAMIDI, KANG, SEUNG H, YOON, SEI SEUNG
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Sprache:eng ; fre ; ger
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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KANG, SEUNG H
YOON, SEI SEUNG
description Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. The word line driver is configured to provide a word line voltage greater than a supply voltage below a transition voltage of the supply voltage and to provide a voltage less than the supply voltage for supply voltages above the transition voltage.
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title WORD LINE VOLTAGE CONTROL IN STT-MRAM
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