RADIATION EMITTING DEVICE
A radiation-emitting device comprising a substrate, a first electrode and a second electrode, and an emitter layer arranged between the first and second electrode. The emitter layer here comprises a matrix material, 0.5-5% by weight of a radiation emitting emitter and 5-30% by weight of a phosphores...
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creator | CHIU, Chien-Shu KRAUSE, Ralf HUNZE, Arvid STEINBACHER, Frank |
description | A radiation-emitting device comprising a substrate, a first electrode and a second electrode, and an emitter layer arranged between the first and second electrode. The emitter layer here comprises a matrix material, 0.5-5% by weight of a radiation emitting emitter and 5-30% by weight of a phosphorescent exciton scavenger. The proportion by weight of the exciton scavenger here is higher than that of the radiation emitting emitter, and the emission maximum of the exciton scavenger is at a shorter wavelength than that of the radiation emitting emitter. In addition, the radiation-emitting device is characterized in that the current efficiency of the emitter layer is increased by at least 10% compared to the current efficiency of an emitter layer without exciton scavenger. |
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The emitter layer here comprises a matrix material, 0.5-5% by weight of a radiation emitting emitter and 5-30% by weight of a phosphorescent exciton scavenger. The proportion by weight of the exciton scavenger here is higher than that of the radiation emitting emitter, and the emission maximum of the exciton scavenger is at a shorter wavelength than that of the radiation emitting emitter. 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The emitter layer here comprises a matrix material, 0.5-5% by weight of a radiation emitting emitter and 5-30% by weight of a phosphorescent exciton scavenger. The proportion by weight of the exciton scavenger here is higher than that of the radiation emitting emitter, and the emission maximum of the exciton scavenger is at a shorter wavelength than that of the radiation emitting emitter. In addition, the radiation-emitting device is characterized in that the current efficiency of the emitter layer is increased by at least 10% compared to the current efficiency of an emitter layer without exciton scavenger.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAMcnTxdAzx9PdTcPX1DAnx9HNXcHEN83R25WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BRsbGpsYGhk6GxkQoAQDRPR94</recordid><startdate>20191204</startdate><enddate>20191204</enddate><creator>CHIU, Chien-Shu</creator><creator>KRAUSE, Ralf</creator><creator>HUNZE, Arvid</creator><creator>STEINBACHER, Frank</creator><scope>EVB</scope></search><sort><creationdate>20191204</creationdate><title>RADIATION EMITTING DEVICE</title><author>CHIU, Chien-Shu ; KRAUSE, Ralf ; HUNZE, Arvid ; STEINBACHER, Frank</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2335301B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHIU, Chien-Shu</creatorcontrib><creatorcontrib>KRAUSE, Ralf</creatorcontrib><creatorcontrib>HUNZE, Arvid</creatorcontrib><creatorcontrib>STEINBACHER, Frank</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHIU, Chien-Shu</au><au>KRAUSE, Ralf</au><au>HUNZE, Arvid</au><au>STEINBACHER, Frank</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RADIATION EMITTING DEVICE</title><date>2019-12-04</date><risdate>2019</risdate><abstract>A radiation-emitting device comprising a substrate, a first electrode and a second electrode, and an emitter layer arranged between the first and second electrode. The emitter layer here comprises a matrix material, 0.5-5% by weight of a radiation emitting emitter and 5-30% by weight of a phosphorescent exciton scavenger. The proportion by weight of the exciton scavenger here is higher than that of the radiation emitting emitter, and the emission maximum of the exciton scavenger is at a shorter wavelength than that of the radiation emitting emitter. In addition, the radiation-emitting device is characterized in that the current efficiency of the emitter layer is increased by at least 10% compared to the current efficiency of an emitter layer without exciton scavenger.</abstract><oa>free_for_read</oa></addata></record> |
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language | eng ; fre ; ger |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | RADIATION EMITTING DEVICE |
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