METHODS FOR FABRICATING MOS DEVICES HAVING HIGHLY STRESSED CHANNELS

Methods for forming a semiconductor device comprising a silicon-comprising substrate are provided. One exemplary method comprises depositing a polysilicon layer overlying the silicon-comprising substrate, amorphizing the polysilicon layer, etching the amorphized polysilicon layer to form a gate elec...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PAL, ROHIT, YANG, FRANK BIN, HARGROVE, MICHAEL J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!