SPUTTER DEVICE
In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the spu...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; fre ; ger |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | OKIMOTO,TADAO TAMAGAKI,HIROSHI |
description | In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2325349A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2325349A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2325349A43</originalsourceid><addsrcrecordid>eNrjZOALDggNCXENUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUbGRqbGJpaOJsZEKAEAmSocog</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SPUTTER DEVICE</title><source>esp@cenet</source><creator>OKIMOTO,TADAO ; TAMAGAKI,HIROSHI</creator><creatorcontrib>OKIMOTO,TADAO ; TAMAGAKI,HIROSHI</creatorcontrib><description>In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151021&DB=EPODOC&CC=EP&NR=2325349A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151021&DB=EPODOC&CC=EP&NR=2325349A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKIMOTO,TADAO</creatorcontrib><creatorcontrib>TAMAGAKI,HIROSHI</creatorcontrib><title>SPUTTER DEVICE</title><description>In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOALDggNCXENUnBxDfN0duVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUbGRqbGJpaOJsZEKAEAmSocog</recordid><startdate>20151021</startdate><enddate>20151021</enddate><creator>OKIMOTO,TADAO</creator><creator>TAMAGAKI,HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20151021</creationdate><title>SPUTTER DEVICE</title><author>OKIMOTO,TADAO ; TAMAGAKI,HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2325349A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>OKIMOTO,TADAO</creatorcontrib><creatorcontrib>TAMAGAKI,HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKIMOTO,TADAO</au><au>TAMAGAKI,HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTER DEVICE</title><date>2015-10-21</date><risdate>2015</risdate><abstract>In a sputter device (1), power of a DC power source (20) is sequentially distributed and supplied in a time division pulse state to a plurality of sputter evaporation sources (4). A power source (10) provided to each of the sputter evaporation sources (4) supplies continuous power to each of the sputter evaporation sources (4). The sputter device (1) having the configuration requires no DC pulse power source to be provided to each of the sputter evaporation sources (4), which reduces the device cost.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP2325349A4 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | SPUTTER DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T02%3A37%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OKIMOTO,TADAO&rft.date=2015-10-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2325349A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |