Double-sided semiconductor structure and method for manufacturing the same

A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in dire...

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Hauptverfasser:	MICCICHE', MONICA, BAZZANO, GAETANO, FRAZZETTO, NICOLO, GRIMALDI, ANTONIO GIUSEPPE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	MICCICHE', MONICA BAZZANO, GAETANO FRAZZETTO, NICOLO GRIMALDI, ANTONIO GIUSEPPE
description	A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2317553B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2317553B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2317553B13</originalsourceid><addsrcrecordid>eNqNikEKwjAUBbNxIeod_gW6qKG411bElQv35Zu82ECTlPzk_lbwAK5mYGar7n2qrxmNeAtLguBNiraakjJJyavUDOJoKaBMyZJbQ-BYHX-Tj28qE0g4YK82jmfB4cedouvwvNwaLGmELGwQUcbhcdTtqev0udV_LB_6vjUm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Double-sided semiconductor structure and method for manufacturing the same</title><source>esp@cenet</source><creator>MICCICHE', MONICA ; BAZZANO, GAETANO ; FRAZZETTO, NICOLO ; GRIMALDI, ANTONIO GIUSEPPE</creator><creatorcontrib>MICCICHE', MONICA ; BAZZANO, GAETANO ; FRAZZETTO, NICOLO ; GRIMALDI, ANTONIO GIUSEPPE</creatorcontrib><description>A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121226&DB=EPODOC&CC=EP&NR=2317553B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121226&DB=EPODOC&CC=EP&NR=2317553B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MICCICHE', MONICA</creatorcontrib><creatorcontrib>BAZZANO, GAETANO</creatorcontrib><creatorcontrib>FRAZZETTO, NICOLO</creatorcontrib><creatorcontrib>GRIMALDI, ANTONIO GIUSEPPE</creatorcontrib><title>Double-sided semiconductor structure and method for manufacturing the same</title><description>A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKwjAUBbNxIeod_gW6qKG411bElQv35Zu82ECTlPzk_lbwAK5mYGar7n2qrxmNeAtLguBNiraakjJJyavUDOJoKaBMyZJbQ-BYHX-Tj28qE0g4YK82jmfB4cedouvwvNwaLGmELGwQUcbhcdTtqev0udV_LB_6vjUm</recordid><startdate>20121226</startdate><enddate>20121226</enddate><creator>MICCICHE', MONICA</creator><creator>BAZZANO, GAETANO</creator><creator>FRAZZETTO, NICOLO</creator><creator>GRIMALDI, ANTONIO GIUSEPPE</creator><scope>EVB</scope></search><sort><creationdate>20121226</creationdate><title>Double-sided semiconductor structure and method for manufacturing the same</title><author>MICCICHE', MONICA ; BAZZANO, GAETANO ; FRAZZETTO, NICOLO ; GRIMALDI, ANTONIO GIUSEPPE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2317553B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MICCICHE', MONICA</creatorcontrib><creatorcontrib>BAZZANO, GAETANO</creatorcontrib><creatorcontrib>FRAZZETTO, NICOLO</creatorcontrib><creatorcontrib>GRIMALDI, ANTONIO GIUSEPPE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MICCICHE', MONICA</au><au>BAZZANO, GAETANO</au><au>FRAZZETTO, NICOLO</au><au>GRIMALDI, ANTONIO GIUSEPPE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Double-sided semiconductor structure and method for manufacturing the same</title><date>2012-12-26</date><risdate>2012</risdate><abstract>A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).</abstract><oa>free_for_read</oa></addata></record>
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language	eng ; fre ; ger
recordid	cdi_epo_espacenet_EP2317553B1
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Double-sided semiconductor structure and method for manufacturing the same
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T05%3A19%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MICCICHE',%20MONICA&rft.date=2012-12-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2317553B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true