SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL BY SUBLIMATION

There is provided a seed crystal for silicon carbide single crystal growth, which is capable of suppressing crystal defects that arise from the interface between a seed crystal and graphite, and producing a high quality silicon carbide single crystal having a low crystal defect density, with good re...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OYANAGI NAOKI, KOGOI HISAO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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