HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION

HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION

The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GACHON, DORIAN, BALLANDRAS, SYLVAIN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GACHON, DORIAN
BALLANDRAS, SYLVAIN
description The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle 2 are aligned, and the second cutting angle 2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2291911A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2291911A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2291911A13</originalsourceid><addsrcrecordid>eNrjZND3cHIMUghyDfb3cwzxD1II9wzxUHBU8PB091DwcQ1z9VHwd1Pw9AtxdQ9yDPH09-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUZGloaWhoaOhsZEKAEAoXIlWA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION</title><source>esp@cenet</source><creator>GACHON, DORIAN ; BALLANDRAS, SYLVAIN</creator><creatorcontrib>GACHON, DORIAN ; BALLANDRAS, SYLVAIN</creatorcontrib><description>The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle 2 are aligned, and the second cutting angle 2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110309&amp;DB=EPODOC&amp;CC=EP&amp;NR=2291911A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110309&amp;DB=EPODOC&amp;CC=EP&amp;NR=2291911A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GACHON, DORIAN</creatorcontrib><creatorcontrib>BALLANDRAS, SYLVAIN</creatorcontrib><title>HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION</title><description>The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle 2 are aligned, and the second cutting angle 2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3cHIMUghyDfb3cwzxD1II9wzxUHBU8PB091DwcQ1z9VHwd1Pw9AtxdQ9yDPH09-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUZGloaWhoaOhsZEKAEAoXIlWA</recordid><startdate>20110309</startdate><enddate>20110309</enddate><creator>GACHON, DORIAN</creator><creator>BALLANDRAS, SYLVAIN</creator><scope>EVB</scope></search><sort><creationdate>20110309</creationdate><title>HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION</title><author>GACHON, DORIAN ; BALLANDRAS, SYLVAIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2291911A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2011</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>GACHON, DORIAN</creatorcontrib><creatorcontrib>BALLANDRAS, SYLVAIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GACHON, DORIAN</au><au>BALLANDRAS, SYLVAIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION</title><date>2011-03-09</date><risdate>2011</risdate><abstract>The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle 2 are aligned, and the second cutting angle 2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2291911A1
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title HBAR RESONATOR WITH A HIGH LEVEL OF INTEGRATION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T08%3A52%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GACHON,%20DORIAN&rft.date=2011-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2291911A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true