GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD

GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD

The substrate has a conductive layer with thickness ranging between 200 and 1000 nanometers, and an upper layer with refraction index ranging between 1.45 and 2.2. Thickness of the upper layer ranges between 5 and 300 nanometers, where substrate and a stack of thin layers are arranged in such a mann...

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Hauptverfasser: COSTER, DOMINIQUE, DECROUPET, DANIEL, SCHUTZ, ALAIN, RUELLE, JEAN-FRANCOIS, DOGNIES, XAVIER, JACOT, PIETER
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator COSTER, DOMINIQUE
DECROUPET, DANIEL
SCHUTZ, ALAIN
RUELLE, JEAN-FRANCOIS
DOGNIES, XAVIER
JACOT, PIETER
description The substrate has a conductive layer with thickness ranging between 200 and 1000 nanometers, and an upper layer with refraction index ranging between 1.45 and 2.2. Thickness of the upper layer ranges between 5 and 300 nanometers, where substrate and a stack of thin layers are arranged in such a manner that the light transmission value between 450 and 850 nanometers is higher than 70 percentage. The stack of thin layers comprises a sub-layer made of titanium oxide. An additional layer is placed on the upper layer. An intermediate layer is placed between the sub-layer and the conductive layer. An independent claim is also included for a method for fabrication of a substrate.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2266141A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2266141A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2266141A13</originalsourceid><addsrcrecordid>eNrjZHB293EMDlbQDYkMcFUIDnUKDglyDHFVcPYHki4K4Z4hHgohHp5-Cj6Oka5BwQqOfi4KAUH-LqHOIZ7-fgq-riEe_i48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDIyMzM0MTQ0dCYCCUA1ugrDg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD</title><source>esp@cenet</source><creator>COSTER, DOMINIQUE ; DECROUPET, DANIEL ; SCHUTZ, ALAIN ; RUELLE, JEAN-FRANCOIS ; DOGNIES, XAVIER ; JACOT, PIETER</creator><creatorcontrib>COSTER, DOMINIQUE ; DECROUPET, DANIEL ; SCHUTZ, ALAIN ; RUELLE, JEAN-FRANCOIS ; DOGNIES, XAVIER ; JACOT, PIETER</creatorcontrib><description>The substrate has a conductive layer with thickness ranging between 200 and 1000 nanometers, and an upper layer with refraction index ranging between 1.45 and 2.2. Thickness of the upper layer ranges between 5 and 300 nanometers, where substrate and a stack of thin layers are arranged in such a manner that the light transmission value between 450 and 850 nanometers is higher than 70 percentage. The stack of thin layers comprises a sub-layer made of titanium oxide. An additional layer is placed on the upper layer. An intermediate layer is placed between the sub-layer and the conductive layer. An independent claim is also included for a method for fabrication of a substrate.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20101229&amp;DB=EPODOC&amp;CC=EP&amp;NR=2266141A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20101229&amp;DB=EPODOC&amp;CC=EP&amp;NR=2266141A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>COSTER, DOMINIQUE</creatorcontrib><creatorcontrib>DECROUPET, DANIEL</creatorcontrib><creatorcontrib>SCHUTZ, ALAIN</creatorcontrib><creatorcontrib>RUELLE, JEAN-FRANCOIS</creatorcontrib><creatorcontrib>DOGNIES, XAVIER</creatorcontrib><creatorcontrib>JACOT, PIETER</creatorcontrib><title>GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD</title><description>The substrate has a conductive layer with thickness ranging between 200 and 1000 nanometers, and an upper layer with refraction index ranging between 1.45 and 2.2. Thickness of the upper layer ranges between 5 and 300 nanometers, where substrate and a stack of thin layers are arranged in such a manner that the light transmission value between 450 and 850 nanometers is higher than 70 percentage. The stack of thin layers comprises a sub-layer made of titanium oxide. An additional layer is placed on the upper layer. An intermediate layer is placed between the sub-layer and the conductive layer. An independent claim is also included for a method for fabrication of a substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB293EMDlbQDYkMcFUIDnUKDglyDHFVcPYHki4K4Z4hHgohHp5-Cj6Oka5BwQqOfi4KAUH-LqHOIZ7-fgq-riEe_i48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDIyMzM0MTQ0dCYCCUA1ugrDg</recordid><startdate>20101229</startdate><enddate>20101229</enddate><creator>COSTER, DOMINIQUE</creator><creator>DECROUPET, DANIEL</creator><creator>SCHUTZ, ALAIN</creator><creator>RUELLE, JEAN-FRANCOIS</creator><creator>DOGNIES, XAVIER</creator><creator>JACOT, PIETER</creator><scope>EVB</scope></search><sort><creationdate>20101229</creationdate><title>GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD</title><author>COSTER, DOMINIQUE ; DECROUPET, DANIEL ; SCHUTZ, ALAIN ; RUELLE, JEAN-FRANCOIS ; DOGNIES, XAVIER ; JACOT, PIETER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2266141A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>COSTER, DOMINIQUE</creatorcontrib><creatorcontrib>DECROUPET, DANIEL</creatorcontrib><creatorcontrib>SCHUTZ, ALAIN</creatorcontrib><creatorcontrib>RUELLE, JEAN-FRANCOIS</creatorcontrib><creatorcontrib>DOGNIES, XAVIER</creatorcontrib><creatorcontrib>JACOT, PIETER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>COSTER, DOMINIQUE</au><au>DECROUPET, DANIEL</au><au>SCHUTZ, ALAIN</au><au>RUELLE, JEAN-FRANCOIS</au><au>DOGNIES, XAVIER</au><au>JACOT, PIETER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD</title><date>2010-12-29</date><risdate>2010</risdate><abstract>The substrate has a conductive layer with thickness ranging between 200 and 1000 nanometers, and an upper layer with refraction index ranging between 1.45 and 2.2. Thickness of the upper layer ranges between 5 and 300 nanometers, where substrate and a stack of thin layers are arranged in such a manner that the light transmission value between 450 and 850 nanometers is higher than 70 percentage. The stack of thin layers comprises a sub-layer made of titanium oxide. An additional layer is placed on the upper layer. An intermediate layer is placed between the sub-layer and the conductive layer. An independent claim is also included for a method for fabrication of a substrate.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title GLASS -TYPE SUBSTRATE COATED WITH THIN LAYERS AND PRODUCTION METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T04%3A14%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=COSTER,%20DOMINIQUE&rft.date=2010-12-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2266141A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true