ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK
An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select...
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| creator | WINNACKER, ALBRECHT EPELBAUM, BORIS M NAGATA, SHUNRO BICKERMANN, MATTHIAS HEIMANN, PAUL FILIP, OCTAVIAN |
| description | An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane ( Fig. 1(a) ), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method ( Fig. 1(b) ). |
| format | Patent |
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| language | eng ; fre ; ger |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK |
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