Micropipe-free silicon carbide and related method of manufacture

A method of growing a single-crystal of semiconductor material in the nominal c-axis growth direction using a physical vapor transport (PVT) process in a sublimation system, wherein the crystal is completely free of micropipe defects is disclosed. The method comprises: attaching a seed material to a...

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Bibliographische Detailangaben

Hauptverfasser:	BALKAS, CENGIZ, BASCERI, CEM, KHLEBNIKOV, YURI, LEONARD, ROBERT T, HOBGOOD, HUDSON MCD, BALAKRISHNA, VIJAY, SILAN, MURAT N, CARTER, CALVIN H., JR, JENNY, JASON R, POWELL, ADRIAN R, TSVETKOV, VALERI, KHLEBNIKOV, IGOR
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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