Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device
A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crysta...
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| creator | FURUYAMA, KOICHI NATORI, EIJI TASAKI, YUUZO |
| description | A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2248765A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2248765A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2248765A13</originalsourceid><addsrcrecordid>eNqNjDsOwjAUBN1QIOAO7wBQEL4tioIoKWhRZNlrYsk_2c8UnJ4IOADVFDs7U3FvkaW3iox1nmTQ5GWoRiqu2YYHefAQNfGADBPzkgpGOwZdFcdMGk-r8Pkli1eEg-I85r7DXEyMdAWLH2eCzt2tvayQYo-SpEIA9921abbHw353Wm_-UN6sHDxD</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device</title><source>esp@cenet</source><creator>FURUYAMA, KOICHI ; NATORI, EIJI ; TASAKI, YUUZO</creator><creatorcontrib>FURUYAMA, KOICHI ; NATORI, EIJI ; TASAKI, YUUZO</creatorcontrib><description>A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.</description><language>eng ; fre ; ger</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; COMPOUNDS THEREOF ; CONCRETE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; LIME, MAGNESIA ; METALLURGY ; NON-METALLIC ELEMENTS ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101110&DB=EPODOC&CC=EP&NR=2248765A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101110&DB=EPODOC&CC=EP&NR=2248765A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FURUYAMA, KOICHI</creatorcontrib><creatorcontrib>NATORI, EIJI</creatorcontrib><creatorcontrib>TASAKI, YUUZO</creatorcontrib><title>Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device</title><description>A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>COMPOUNDS THEREOF</subject><subject>CONCRETE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>REFRACTORIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDsOwjAUBN1QIOAO7wBQEL4tioIoKWhRZNlrYsk_2c8UnJ4IOADVFDs7U3FvkaW3iox1nmTQ5GWoRiqu2YYHefAQNfGADBPzkgpGOwZdFcdMGk-r8Pkli1eEg-I85r7DXEyMdAWLH2eCzt2tvayQYo-SpEIA9921abbHw353Wm_-UN6sHDxD</recordid><startdate>20101110</startdate><enddate>20101110</enddate><creator>FURUYAMA, KOICHI</creator><creator>NATORI, EIJI</creator><creator>TASAKI, YUUZO</creator><scope>EVB</scope></search><sort><creationdate>20101110</creationdate><title>Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device</title><author>FURUYAMA, KOICHI ; NATORI, EIJI ; TASAKI, YUUZO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2248765A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2010</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>COMPOUNDS THEREOF</topic><topic>CONCRETE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>REFRACTORIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>FURUYAMA, KOICHI</creatorcontrib><creatorcontrib>NATORI, EIJI</creatorcontrib><creatorcontrib>TASAKI, YUUZO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FURUYAMA, KOICHI</au><au>NATORI, EIJI</au><au>TASAKI, YUUZO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device</title><date>2010-11-10</date><risdate>2010</risdate><abstract>A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F COMPOUNDS THEREOF CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY NON-METALLIC ELEMENTS REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE |
| title | Ceramic film and manufacturing method therefor, semiconductor device and piezoelectric device |
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