SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION

Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area 22. The semiconductor device includes a first test structure 11 for determining a contact resistance between the patterned metallization...

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Hauptverfasser:	ROUSSEVILLE, LUCIE, LE DUC, PHILIPPE, BARDY, SERGE, DESMORTREUX, DAVID
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	ROUSSEVILLE, LUCIE LE DUC, PHILIPPE BARDY, SERGE DESMORTREUX, DAVID
description	Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area 22. The semiconductor device includes a first test structure 11 for determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas 22. The first test structure includes a pad metal layer portion 24 and a metallization layer portion 18 being in electrical communication with the pad metal layer portion 24 through the common contact area 22. The first test structure 11 further includes connection areas 14, 16 that are electrically connected with each other substantially via the common contact area 22. Upon application of a current between the connection areas 14, 16 a voltage drop occurs that is representative for a voltage drop over the common contact area 22.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2220680A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2220680A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2220680A13</originalsourceid><addsrcrecordid>eNqNy0EKwjAQheFuXIh6h7lAoVYQt2MyNYE2kczEgptSJK5Ei_X-WNEDuHqL_3vz7MnUWOWdjkp8AE0nqwjQaWixogCtFQMIQizAEiYVw7c3JMZrqKYXMhOzdQdAbYitd-AriE5TyPexOX4s1rU9o0xtmc2u_W1Mq98uMqhIlMnT8OjSOPSXdE-vjo5lWRbbXYHrzR_kDdVkN_U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION</title><source>esp@cenet</source><creator>ROUSSEVILLE, LUCIE ; LE DUC, PHILIPPE ; BARDY, SERGE ; DESMORTREUX, DAVID</creator><creatorcontrib>ROUSSEVILLE, LUCIE ; LE DUC, PHILIPPE ; BARDY, SERGE ; DESMORTREUX, DAVID</creatorcontrib><description>Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area 22. The semiconductor device includes a first test structure 11 for determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas 22. The first test structure includes a pad metal layer portion 24 and a metallization layer portion 18 being in electrical communication with the pad metal layer portion 24 through the common contact area 22. The first test structure 11 further includes connection areas 14, 16 that are electrically connected with each other substantially via the common contact area 22. Upon application of a current between the connection areas 14, 16 a voltage drop occurs that is representative for a voltage drop over the common contact area 22.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100825&DB=EPODOC&CC=EP&NR=2220680A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100825&DB=EPODOC&CC=EP&NR=2220680A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROUSSEVILLE, LUCIE</creatorcontrib><creatorcontrib>LE DUC, PHILIPPE</creatorcontrib><creatorcontrib>BARDY, SERGE</creatorcontrib><creatorcontrib>DESMORTREUX, DAVID</creatorcontrib><title>SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION</title><description>Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area 22. The semiconductor device includes a first test structure 11 for determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas 22. The first test structure includes a pad metal layer portion 24 and a metallization layer portion 18 being in electrical communication with the pad metal layer portion 24 through the common contact area 22. The first test structure 11 further includes connection areas 14, 16 that are electrically connected with each other substantially via the common contact area 22. Upon application of a current between the connection areas 14, 16 a voltage drop occurs that is representative for a voltage drop over the common contact area 22.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy0EKwjAQheFuXIh6h7lAoVYQt2MyNYE2kczEgptSJK5Ei_X-WNEDuHqL_3vz7MnUWOWdjkp8AE0nqwjQaWixogCtFQMIQizAEiYVw7c3JMZrqKYXMhOzdQdAbYitd-AriE5TyPexOX4s1rU9o0xtmc2u_W1Mq98uMqhIlMnT8OjSOPSXdE-vjo5lWRbbXYHrzR_kDdVkN_U</recordid><startdate>20100825</startdate><enddate>20100825</enddate><creator>ROUSSEVILLE, LUCIE</creator><creator>LE DUC, PHILIPPE</creator><creator>BARDY, SERGE</creator><creator>DESMORTREUX, DAVID</creator><scope>EVB</scope></search><sort><creationdate>20100825</creationdate><title>SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION</title><author>ROUSSEVILLE, LUCIE ; LE DUC, PHILIPPE ; BARDY, SERGE ; DESMORTREUX, DAVID</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2220680A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ROUSSEVILLE, LUCIE</creatorcontrib><creatorcontrib>LE DUC, PHILIPPE</creatorcontrib><creatorcontrib>BARDY, SERGE</creatorcontrib><creatorcontrib>DESMORTREUX, DAVID</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ROUSSEVILLE, LUCIE</au><au>LE DUC, PHILIPPE</au><au>BARDY, SERGE</au><au>DESMORTREUX, DAVID</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION</title><date>2010-08-25</date><risdate>2010</risdate><abstract>Semiconductor device with a patterned pad metal layer and a patterned under-bump metallization layer being mutually electrically connected in a common contact area 22. The semiconductor device includes a first test structure 11 for determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas 22. The first test structure includes a pad metal layer portion 24 and a metallization layer portion 18 being in electrical communication with the pad metal layer portion 24 through the common contact area 22. The first test structure 11 further includes connection areas 14, 16 that are electrically connected with each other substantially via the common contact area 22. Upon application of a current between the connection areas 14, 16 a voltage drop occurs that is representative for a voltage drop over the common contact area 22.</abstract><oa>free_for_read</oa></addata></record>
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recordid	cdi_epo_espacenet_EP2220680A1
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
title	SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION
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