Precursors for depositing silicon-containing films and methods using same
Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following f...
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| creator | WU, JINGPING HANSONG, CHENG ZHOU, CHENGGANG XIAO, MANCHAO GAFFNEY, THOMAS RICHARD LAL, GAURI SANKAR |
| description | Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):
(R 1 R 2 N) n SiR 3 4-n (I)
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2154141B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2154141B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2154141B13</originalsourceid><addsrcrecordid>eNrjZPAMKEpNLi0qzi8qVkjLL1JISS3IL84sycxLVyjOzMlMzs_TBeKSxMw8kFBaZk5usUJiXopCbmpJRn5KsUJpMVhpYm4qDwNrWmJOcSovlOZmUHBzDXH20AWaGJ9aXJCYnJqXWhLvGmBkaGpiaGLoZGhMhBIAzWU0yQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Precursors for depositing silicon-containing films and methods using same</title><source>esp@cenet</source><creator>WU, JINGPING ; HANSONG, CHENG ; ZHOU, CHENGGANG ; XIAO, MANCHAO ; GAFFNEY, THOMAS RICHARD ; LAL, GAURI SANKAR</creator><creatorcontrib>WU, JINGPING ; HANSONG, CHENG ; ZHOU, CHENGGANG ; XIAO, MANCHAO ; GAFFNEY, THOMAS RICHARD ; LAL, GAURI SANKAR</creatorcontrib><description>Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):
(R 1 R 2 N) n SiR 3 4-n (I)
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.</description><language>eng ; fre ; ger</language><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160615&DB=EPODOC&CC=EP&NR=2154141B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160615&DB=EPODOC&CC=EP&NR=2154141B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU, JINGPING</creatorcontrib><creatorcontrib>HANSONG, CHENG</creatorcontrib><creatorcontrib>ZHOU, CHENGGANG</creatorcontrib><creatorcontrib>XIAO, MANCHAO</creatorcontrib><creatorcontrib>GAFFNEY, THOMAS RICHARD</creatorcontrib><creatorcontrib>LAL, GAURI SANKAR</creatorcontrib><title>Precursors for depositing silicon-containing films and methods using same</title><description>Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):
(R 1 R 2 N) n SiR 3 4-n (I)
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.</description><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAMKEpNLi0qzi8qVkjLL1JISS3IL84sycxLVyjOzMlMzs_TBeKSxMw8kFBaZk5usUJiXopCbmpJRn5KsUJpMVhpYm4qDwNrWmJOcSovlOZmUHBzDXH20AWaGJ9aXJCYnJqXWhLvGmBkaGpiaGLoZGhMhBIAzWU0yQ</recordid><startdate>20160615</startdate><enddate>20160615</enddate><creator>WU, JINGPING</creator><creator>HANSONG, CHENG</creator><creator>ZHOU, CHENGGANG</creator><creator>XIAO, MANCHAO</creator><creator>GAFFNEY, THOMAS RICHARD</creator><creator>LAL, GAURI SANKAR</creator><scope>EVB</scope></search><sort><creationdate>20160615</creationdate><title>Precursors for depositing silicon-containing films and methods using same</title><author>WU, JINGPING ; HANSONG, CHENG ; ZHOU, CHENGGANG ; XIAO, MANCHAO ; GAFFNEY, THOMAS RICHARD ; LAL, GAURI SANKAR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2154141B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2016</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>WU, JINGPING</creatorcontrib><creatorcontrib>HANSONG, CHENG</creatorcontrib><creatorcontrib>ZHOU, CHENGGANG</creatorcontrib><creatorcontrib>XIAO, MANCHAO</creatorcontrib><creatorcontrib>GAFFNEY, THOMAS RICHARD</creatorcontrib><creatorcontrib>LAL, GAURI SANKAR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WU, JINGPING</au><au>HANSONG, CHENG</au><au>ZHOU, CHENGGANG</au><au>XIAO, MANCHAO</au><au>GAFFNEY, THOMAS RICHARD</au><au>LAL, GAURI SANKAR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Precursors for depositing silicon-containing films and methods using same</title><date>2016-06-15</date><risdate>2016</risdate><abstract>Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):
(R 1 R 2 N) n SiR 3 4-n (I)
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Precursors for depositing silicon-containing films and methods using same |
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