Method for producing a light emitting device
A light emitting device 10 has a supporting substrate 12; a first electrode 14 disposed on the supporting substrate; an electroluminescent layer disposed on the first electrode and including at least a light emitting layer 16; a second electrode 18 disposed opposite to the first electrode, with the...
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creator | Tobise, Manabu |
description | A light emitting device 10 has a supporting substrate 12; a first electrode 14 disposed on the supporting substrate; an electroluminescent layer disposed on the first electrode and including at least a light emitting layer 16; a second electrode 18 disposed opposite to the first electrode, with the electroluminescent layer being interposed therebetween; a resin layer 20 disposed on the second electrode directly or with an intermediate layer interposed therebetween, or on a surface of the supporting substrate at the opposite side of a surface where the first electrode is disposed; and light transmitting particles 22 scattered in the resin layer, and at least a portion of the light transmitting particles are scattered in the resin layer such that a part of each of the scattered particles is embedded in a surface of the resin layer at the side at which light is extracted from the light emitting layer. |
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a resin layer 20 disposed on the second electrode directly or with an intermediate layer interposed therebetween, or on a surface of the supporting substrate at the opposite side of a surface where the first electrode is disposed; and light transmitting particles 22 scattered in the resin layer, and at least a portion of the light transmitting particles are scattered in the resin layer such that a part of each of the scattered particles is embedded in a surface of the resin layer at the side at which light is extracted from the light emitting layer.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180926&DB=EPODOC&CC=EP&NR=2151878B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180926&DB=EPODOC&CC=EP&NR=2151878B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tobise, Manabu</creatorcontrib><title>Method for producing a light emitting device</title><description>A light emitting device 10 has a supporting substrate 12; a first electrode 14 disposed on the supporting substrate; an electroluminescent layer disposed on the first electrode and including at least a light emitting layer 16; a second electrode 18 disposed opposite to the first electrode, with the electroluminescent layer being interposed therebetween; a resin layer 20 disposed on the second electrode directly or with an intermediate layer interposed therebetween, or on a surface of the supporting substrate at the opposite side of a surface where the first electrode is disposed; and light transmitting particles 22 scattered in the resin layer, and at least a portion of the light transmitting particles are scattered in the resin layer such that a part of each of the scattered particles is embedded in a surface of the resin layer at the side at which light is extracted from the light emitting layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxTS3JyE9RSMsvUigoyk8pTc7MS1dIVMjJTM8oUUjNzSwpAQmkpJZlJqfyMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ41wAjQ1NDC3MLJ0NjIpQAACyGKTo</recordid><startdate>20180926</startdate><enddate>20180926</enddate><creator>Tobise, Manabu</creator><scope>EVB</scope></search><sort><creationdate>20180926</creationdate><title>Method for producing a light emitting device</title><author>Tobise, Manabu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2151878B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Tobise, Manabu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tobise, Manabu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for producing a light emitting device</title><date>2018-09-26</date><risdate>2018</risdate><abstract>A light emitting device 10 has a supporting substrate 12; a first electrode 14 disposed on the supporting substrate; an electroluminescent layer disposed on the first electrode and including at least a light emitting layer 16; a second electrode 18 disposed opposite to the first electrode, with the electroluminescent layer being interposed therebetween; a resin layer 20 disposed on the second electrode directly or with an intermediate layer interposed therebetween, or on a surface of the supporting substrate at the opposite side of a surface where the first electrode is disposed; and light transmitting particles 22 scattered in the resin layer, and at least a portion of the light transmitting particles are scattered in the resin layer such that a part of each of the scattered particles is embedded in a surface of the resin layer at the side at which light is extracted from the light emitting layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method for producing a light emitting device |
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