Linear electron source, evaporator using linear electron source, and applications of electron sources
A linear plasma electron source (100) is provided. The linear plasma electron source includes a housing (112) acting as a first electrode, the housing having side walls (312), a slit opening (114) in the housing for trespassing of a electron beam, the slit opening defining a length direction of the...
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creator | Hacker, Volker Lotz, Hans-Georg Klemm, Günter |
description | A linear plasma electron source (100) is provided. The linear plasma electron source includes a housing (112) acting as a first electrode, the housing having side walls (312), a slit opening (114) in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode (110) being arranged within the housing and having a first side (413) facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply (70) for providing a gas into the housing. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2073243B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2073243B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2073243B13</originalsourceid><addsrcrecordid>eNqNyjEKAjEQBdA0FqLeYQ6goBvBXlmxsLCwX4b4VwJhZshkPb-NlSBYvebNA65ZwJVQkFpVIdepJqwJLzat3LTS5FmeVH5ElgexWcmJW1Zx0vE7-TLMRi6O1cdFoHN_P102MB3gxgmCNvS3bnuI3T4ed_GP8gboAz9A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Linear electron source, evaporator using linear electron source, and applications of electron sources</title><source>esp@cenet</source><creator>Hacker, Volker ; Lotz, Hans-Georg ; Klemm, Günter</creator><creatorcontrib>Hacker, Volker ; Lotz, Hans-Georg ; Klemm, Günter</creatorcontrib><description>A linear plasma electron source (100) is provided. The linear plasma electron source includes a housing (112) acting as a first electrode, the housing having side walls (312), a slit opening (114) in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode (110) being arranged within the housing and having a first side (413) facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply (70) for providing a gas into the housing.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; GAMMA RAY OR X-RAY MICROSCOPES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; IRRADIATION DEVICES ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; PERFORMING OPERATIONS ; PHYSICS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR ; TRANSPORTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181003&DB=EPODOC&CC=EP&NR=2073243B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181003&DB=EPODOC&CC=EP&NR=2073243B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hacker, Volker</creatorcontrib><creatorcontrib>Lotz, Hans-Georg</creatorcontrib><creatorcontrib>Klemm, Günter</creatorcontrib><title>Linear electron source, evaporator using linear electron source, and applications of electron sources</title><description>A linear plasma electron source (100) is provided. The linear plasma electron source includes a housing (112) acting as a first electrode, the housing having side walls (312), a slit opening (114) in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode (110) being arranged within the housing and having a first side (413) facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply (70) for providing a gas into the housing.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>GAMMA RAY OR X-RAY MICROSCOPES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>IRRADIATION DEVICES</subject><subject>LAYERED PRODUCTS</subject><subject>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</subject><subject>METALLURGY</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEKAjEQBdA0FqLeYQ6goBvBXlmxsLCwX4b4VwJhZshkPb-NlSBYvebNA65ZwJVQkFpVIdepJqwJLzat3LTS5FmeVH5ElgexWcmJW1Zx0vE7-TLMRi6O1cdFoHN_P102MB3gxgmCNvS3bnuI3T4ed_GP8gboAz9A</recordid><startdate>20181003</startdate><enddate>20181003</enddate><creator>Hacker, Volker</creator><creator>Lotz, Hans-Georg</creator><creator>Klemm, Günter</creator><scope>EVB</scope></search><sort><creationdate>20181003</creationdate><title>Linear electron source, evaporator using linear electron source, and applications of electron sources</title><author>Hacker, Volker ; Lotz, Hans-Georg ; Klemm, Günter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2073243B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>GAMMA RAY OR X-RAY MICROSCOPES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>IRRADIATION DEVICES</topic><topic>LAYERED PRODUCTS</topic><topic>LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM</topic><topic>METALLURGY</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Hacker, Volker</creatorcontrib><creatorcontrib>Lotz, Hans-Georg</creatorcontrib><creatorcontrib>Klemm, Günter</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hacker, Volker</au><au>Lotz, Hans-Georg</au><au>Klemm, Günter</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Linear electron source, evaporator using linear electron source, and applications of electron sources</title><date>2018-10-03</date><risdate>2018</risdate><abstract>A linear plasma electron source (100) is provided. The linear plasma electron source includes a housing (112) acting as a first electrode, the housing having side walls (312), a slit opening (114) in the housing for trespassing of a electron beam, the slit opening defining a length direction of the source, a second electrode (110) being arranged within the housing and having a first side (413) facing the slit opening, the first side being spaced from the slit opening by a first distance, wherein the length of the electron source in the length direction is at least 5 times the first distance, and at least one gas supply (70) for providing a gas into the housing.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY GAMMA RAY OR X-RAY MICROSCOPES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL IRRADIATION DEVICES LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY NUCLEAR ENGINEERING NUCLEAR PHYSICS PERFORMING OPERATIONS PHYSICS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR TRANSPORTING |
title | Linear electron source, evaporator using linear electron source, and applications of electron sources |
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