Method for making an electronic device

Method for making an electronic device

The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YON, DOMINIQUE, CHEVRIE, DAVID D.R, NEUILLY, FRANCOIS
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YON, DOMINIQUE
CHEVRIE, DAVID D.R
NEUILLY, FRANCOIS
description The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the sacrificial buried layer 220 functions as a stop layer during etching of holes 218 and 218′ from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2067167B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2067167B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2067167B13</originalsourceid><addsrcrecordid>eNrjZFDzTS3JyE9RSMsvUshNzM7MS1dIzFNIzUlNLinKz8tMVkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUYGZuaGZuZOhsZEKAEA_q8m1w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for making an electronic device</title><source>esp@cenet</source><creator>YON, DOMINIQUE ; CHEVRIE, DAVID D.R ; NEUILLY, FRANCOIS</creator><creatorcontrib>YON, DOMINIQUE ; CHEVRIE, DAVID D.R ; NEUILLY, FRANCOIS</creatorcontrib><description>The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the sacrificial buried layer 220 functions as a stop layer during etching of holes 218 and 218′ from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160413&amp;DB=EPODOC&amp;CC=EP&amp;NR=2067167B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160413&amp;DB=EPODOC&amp;CC=EP&amp;NR=2067167B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YON, DOMINIQUE</creatorcontrib><creatorcontrib>CHEVRIE, DAVID D.R</creatorcontrib><creatorcontrib>NEUILLY, FRANCOIS</creatorcontrib><title>Method for making an electronic device</title><description>The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the sacrificial buried layer 220 functions as a stop layer during etching of holes 218 and 218′ from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDzTS3JyE9RSMsvUshNzM7MS1dIzFNIzUlNLinKz8tMVkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAUYGZuaGZuZOhsZEKAEA_q8m1w</recordid><startdate>20160413</startdate><enddate>20160413</enddate><creator>YON, DOMINIQUE</creator><creator>CHEVRIE, DAVID D.R</creator><creator>NEUILLY, FRANCOIS</creator><scope>EVB</scope></search><sort><creationdate>20160413</creationdate><title>Method for making an electronic device</title><author>YON, DOMINIQUE ; CHEVRIE, DAVID D.R ; NEUILLY, FRANCOIS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2067167B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YON, DOMINIQUE</creatorcontrib><creatorcontrib>CHEVRIE, DAVID D.R</creatorcontrib><creatorcontrib>NEUILLY, FRANCOIS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YON, DOMINIQUE</au><au>CHEVRIE, DAVID D.R</au><au>NEUILLY, FRANCOIS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for making an electronic device</title><date>2016-04-13</date><risdate>2016</risdate><abstract>The present invention provides a method for making a vertical interconnect through a substrate. The method makes use of a sacrificial buried layer 220 arranged in between the first side 202 and the second side 204 of a substrate 200. After having etched trenches 206 and 206′ from the first side, the sacrificial buried layer 220 functions as a stop layer during etching of holes 218 and 218′ from the second side, therewith protecting the trenches from damage during overetch of the holes. The etching of trenches is completely decoupled from etching of the holes providing several advantages for process choice and device manufacture. After removing part of the sacrificial buried layer to interconnect the trenches and the holes, the resulting vertical interconnect hole is filled to form a vertical interconnect.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2067167B1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for making an electronic device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-16T06%3A26%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YON,%20DOMINIQUE&rft.date=2016-04-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2067167B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true