SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL

The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate con...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OJIMA, SATOYUKI, UEGURI, TOYOHIRO, WATABE, TAKENORI, ISHIKAWA, NAOKI, OHTSUKA, HIROYUKI
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator OJIMA, SATOYUKI
UEGURI, TOYOHIRO
WATABE, TAKENORI
ISHIKAWA, NAOKI
OHTSUKA, HIROYUKI
description The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2051304A4</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2051304A4</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2051304A43</originalsourceid><addsrcrecordid>eNrjZIgLdvX1dPb3cwl1DvEPUggOdQoOCXIMcdVR8HUN8fB3UXADigKxr6efu4Krj6tzSJC_C1DW0c8FWYWvo1-om6NzSGgQSF2wv49jkIKzq48PDwNrWmJOcSovlOZmUHBzDXH20E0tyI9PLS5ITE7NSy2Jdw0wMjA1NDYwcTQxJkIJAMGiMmY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL</title><source>esp@cenet</source><creator>OJIMA, SATOYUKI ; UEGURI, TOYOHIRO ; WATABE, TAKENORI ; ISHIKAWA, NAOKI ; OHTSUKA, HIROYUKI</creator><creatorcontrib>OJIMA, SATOYUKI ; UEGURI, TOYOHIRO ; WATABE, TAKENORI ; ISHIKAWA, NAOKI ; OHTSUKA, HIROYUKI</creatorcontrib><description>The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160810&amp;DB=EPODOC&amp;CC=EP&amp;NR=2051304A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160810&amp;DB=EPODOC&amp;CC=EP&amp;NR=2051304A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OJIMA, SATOYUKI</creatorcontrib><creatorcontrib>UEGURI, TOYOHIRO</creatorcontrib><creatorcontrib>WATABE, TAKENORI</creatorcontrib><creatorcontrib>ISHIKAWA, NAOKI</creatorcontrib><creatorcontrib>OHTSUKA, HIROYUKI</creatorcontrib><title>SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL</title><description>The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgLdvX1dPb3cwl1DvEPUggOdQoOCXIMcdVR8HUN8fB3UXADigKxr6efu4Krj6tzSJC_C1DW0c8FWYWvo1-om6NzSGgQSF2wv49jkIKzq48PDwNrWmJOcSovlOZmUHBzDXH20E0tyI9PLS5ITE7NSy2Jdw0wMjA1NDYwcTQxJkIJAMGiMmY</recordid><startdate>20160810</startdate><enddate>20160810</enddate><creator>OJIMA, SATOYUKI</creator><creator>UEGURI, TOYOHIRO</creator><creator>WATABE, TAKENORI</creator><creator>ISHIKAWA, NAOKI</creator><creator>OHTSUKA, HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20160810</creationdate><title>SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL</title><author>OJIMA, SATOYUKI ; UEGURI, TOYOHIRO ; WATABE, TAKENORI ; ISHIKAWA, NAOKI ; OHTSUKA, HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2051304A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OJIMA, SATOYUKI</creatorcontrib><creatorcontrib>UEGURI, TOYOHIRO</creatorcontrib><creatorcontrib>WATABE, TAKENORI</creatorcontrib><creatorcontrib>ISHIKAWA, NAOKI</creatorcontrib><creatorcontrib>OHTSUKA, HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OJIMA, SATOYUKI</au><au>UEGURI, TOYOHIRO</au><au>WATABE, TAKENORI</au><au>ISHIKAWA, NAOKI</au><au>OHTSUKA, HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL</title><date>2016-08-10</date><risdate>2016</risdate><abstract>The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2051304A4
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR SUBSTRATE, METHOD FOR FORMING ELECTRODE, AND METHOD FOR MANUFACTURING SOLAR CELL
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T08%3A25%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OJIMA,%20SATOYUKI&rft.date=2016-08-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2051304A4%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true