Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: NAEBAUER, ANTON
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NAEBAUER, ANTON
description
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP2045358A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP2045358A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP2045358A33</originalsourceid><addsrcrecordid>eNqNjsEKwjAMhnfxIOo75AUEcQ68ikw8ingftc3WQNeWpkP2eL6Z3aY7ewpJvu9Pltn7jqqTZBuIGkE6y13rIzkLrgYfnERmaAQjg-rCwEmNLUlhhil4nVag0Dumn8VkKAWBET2GWXtpkhp0r4Jr0ALxkJ5OowKyIJSa_OjGR0Z3aJ5zegLTQQEBhRzRyY_rbFELw7j51lUGl_Jxvm6TViF7IdFirMrbfnco8uJ4yvM_kA-Yw2FJ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product</title><source>esp@cenet</source><creator>NAEBAUER, ANTON</creator><creatorcontrib>NAEBAUER, ANTON</creatorcontrib><language>eng ; fre ; ger</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20101103&amp;DB=EPODOC&amp;CC=EP&amp;NR=2045358A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20101103&amp;DB=EPODOC&amp;CC=EP&amp;NR=2045358A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAEBAUER, ANTON</creatorcontrib><title>Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product</title><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjsEKwjAMhnfxIOo75AUEcQ68ikw8ingftc3WQNeWpkP2eL6Z3aY7ewpJvu9Pltn7jqqTZBuIGkE6y13rIzkLrgYfnERmaAQjg-rCwEmNLUlhhil4nVag0Dumn8VkKAWBET2GWXtpkhp0r4Jr0ALxkJ5OowKyIJSa_OjGR0Z3aJ5zegLTQQEBhRzRyY_rbFELw7j51lUGl_Jxvm6TViF7IdFirMrbfnco8uJ4yvM_kA-Yw2FJ</recordid><startdate>20101103</startdate><enddate>20101103</enddate><creator>NAEBAUER, ANTON</creator><scope>EVB</scope></search><sort><creationdate>20101103</creationdate><title>Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product</title><author>NAEBAUER, ANTON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP2045358A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2010</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>NAEBAUER, ANTON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAEBAUER, ANTON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product</title><date>2010-11-03</date><risdate>2010</risdate><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP2045358A3
source esp@cenet
subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Reducing the consumption of process gases during chemical gas phase deposition of silicon layers during which hydrogen is produced in addition to the layer to be deposited as a reaction product
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T13%3A20%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAEBAUER,%20ANTON&rft.date=2010-11-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP2045358A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true