A semiconductor materials inspection system

The invention relates to a semiconductor materials inspection system having a substrate which is thermally coupled to a heat sink. Drive circuitry is provided to supply power to an array of solid-state light emitting devices which are disposed on the surface of the substrate. The system produces a l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MCNEIL, TOM, VLACH, FRANCOIS, OWEN, MARK D
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS BLASTING CHEMICAL ASPECTS OF BANDAGES, DRESSINGS, ABSORBENT PADS, ORSURGICAL ARTICLES CINEMATOGRAPHY DEVICES USING STIMULATED EMISSION DISINFECTION, STERILISATION, OR DEODORISATION OF AIR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HEATING HOLOGRAPHY HUMAN NECESSITIES HYGIENE INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES LIGHT SOURCES NOT OTHERWISE PROVIDED FOR LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATINGELEMENTS LIGHTING MATERIALS FOR BANDAGES, DRESSINGS, ABSORBENT PADS, OR SURGICALARTICLES MATERIALS THEREFOR MEASURING MECHANICAL ENGINEERING MEDICAL OR VETERINARY SCIENCE METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS INGENERAL NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING WEAPONS
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Beschreibung
Zusammenfassung:	The invention relates to a semiconductor materials inspection system having a substrate which is thermally coupled to a heat sink. Drive circuitry is provided to supply power to an array of solid-state light emitting devices which are disposed on the surface of the substrate. The system produces a light output power density of at least about 50mW/cm 2 wherein the solid-state light emitting devices are capable of emitting light in the infrared region between about 1050nm and about 2.5 um.