MTJ sensoring including domain stable free layer
A magnetic field sensor having a domain stable free layer, comprising: an antiferromagnetic layer on a lower conductive layer; a pinned magnetic reference layer, having a magnetization direction, on said antiferromagnetic layer; a separation layer on said magnetic reference layer; a magnetic free la...
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| creator | YIMIN, GUO PO-KANG, WANG |
| description | A magnetic field sensor having a domain stable free layer, comprising:
an antiferromagnetic layer on a lower conductive layer;
a pinned magnetic reference layer, having a magnetization direction, on said antiferromagnetic layer;
a separation layer on said magnetic reference layer;
a magnetic free layer on said separation layer;
a capping layer on said magnetic free layer;
said magnetic reference, separation, free, and capping layers having the form of a plurality of independent sensor stacks, each such stack having, in plan view, a width dimension along a first axis and a length dimension along a second axis, with a length-to-width ratio sufficient to support an anisotropy field, and a length dimension no greater than a domain wall width and perpendicular to said pinned magnetization direction whereby all free layers of said sensor stacks are domain stable when exposed to a magnetic field;
said lower conductive layer having the form of a bottom electrode that is common to all said sensor stacks;
a dielectric layer that fills all space between said sensor stacks, including covering all sidewalls; and
a top electrode that contacts said capping layer whereby it is common to all said sensor stacks. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1986015A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1986015A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1986015A33</originalsourceid><addsrcrecordid>eNrjZDDwDfFSKE7NK84vysxLV8jMS84pTQGxUvJzEzPzFIpLEpNyUhXSilJTFXISK1OLeBhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAoaWFmYGhqaOxMRFKAPDjKrE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MTJ sensoring including domain stable free layer</title><source>esp@cenet</source><creator>YIMIN, GUO ; PO-KANG, WANG</creator><creatorcontrib>YIMIN, GUO ; PO-KANG, WANG</creatorcontrib><description>A magnetic field sensor having a domain stable free layer, comprising:
an antiferromagnetic layer on a lower conductive layer;
a pinned magnetic reference layer, having a magnetization direction, on said antiferromagnetic layer;
a separation layer on said magnetic reference layer;
a magnetic free layer on said separation layer;
a capping layer on said magnetic free layer;
said magnetic reference, separation, free, and capping layers having the form of a plurality of independent sensor stacks, each such stack having, in plan view, a width dimension along a first axis and a length dimension along a second axis, with a length-to-width ratio sufficient to support an anisotropy field, and a length dimension no greater than a domain wall width and perpendicular to said pinned magnetization direction whereby all free layers of said sensor stacks are domain stable when exposed to a magnetic field;
said lower conductive layer having the form of a bottom electrode that is common to all said sensor stacks;
a dielectric layer that fills all space between said sensor stacks, including covering all sidewalls; and
a top electrode that contacts said capping layer whereby it is common to all said sensor stacks.</description><language>eng ; fre ; ger</language><subject>ELECTRICITY ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110112&DB=EPODOC&CC=EP&NR=1986015A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110112&DB=EPODOC&CC=EP&NR=1986015A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YIMIN, GUO</creatorcontrib><creatorcontrib>PO-KANG, WANG</creatorcontrib><title>MTJ sensoring including domain stable free layer</title><description>A magnetic field sensor having a domain stable free layer, comprising:
an antiferromagnetic layer on a lower conductive layer;
a pinned magnetic reference layer, having a magnetization direction, on said antiferromagnetic layer;
a separation layer on said magnetic reference layer;
a magnetic free layer on said separation layer;
a capping layer on said magnetic free layer;
said magnetic reference, separation, free, and capping layers having the form of a plurality of independent sensor stacks, each such stack having, in plan view, a width dimension along a first axis and a length dimension along a second axis, with a length-to-width ratio sufficient to support an anisotropy field, and a length dimension no greater than a domain wall width and perpendicular to said pinned magnetization direction whereby all free layers of said sensor stacks are domain stable when exposed to a magnetic field;
said lower conductive layer having the form of a bottom electrode that is common to all said sensor stacks;
a dielectric layer that fills all space between said sensor stacks, including covering all sidewalls; and
a top electrode that contacts said capping layer whereby it is common to all said sensor stacks.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDwDfFSKE7NK84vysxLV8jMS84pTQGxUvJzEzPzFIpLEpNyUhXSilJTFXISK1OLeBhY0xJzilN5oTQ3g4Kba4izh25qQX58anFBYnJqXmpJvGuAoaWFmYGhqaOxMRFKAPDjKrE</recordid><startdate>20110112</startdate><enddate>20110112</enddate><creator>YIMIN, GUO</creator><creator>PO-KANG, WANG</creator><scope>EVB</scope></search><sort><creationdate>20110112</creationdate><title>MTJ sensoring including domain stable free layer</title><author>YIMIN, GUO ; PO-KANG, WANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1986015A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2011</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YIMIN, GUO</creatorcontrib><creatorcontrib>PO-KANG, WANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YIMIN, GUO</au><au>PO-KANG, WANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MTJ sensoring including domain stable free layer</title><date>2011-01-12</date><risdate>2011</risdate><abstract>A magnetic field sensor having a domain stable free layer, comprising:
an antiferromagnetic layer on a lower conductive layer;
a pinned magnetic reference layer, having a magnetization direction, on said antiferromagnetic layer;
a separation layer on said magnetic reference layer;
a magnetic free layer on said separation layer;
a capping layer on said magnetic free layer;
said magnetic reference, separation, free, and capping layers having the form of a plurality of independent sensor stacks, each such stack having, in plan view, a width dimension along a first axis and a length dimension along a second axis, with a length-to-width ratio sufficient to support an anisotropy field, and a length dimension no greater than a domain wall width and perpendicular to said pinned magnetization direction whereby all free layers of said sensor stacks are domain stable when exposed to a magnetic field;
said lower conductive layer having the form of a bottom electrode that is common to all said sensor stacks;
a dielectric layer that fills all space between said sensor stacks, including covering all sidewalls; and
a top electrode that contacts said capping layer whereby it is common to all said sensor stacks.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; ger |
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| subjects | ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | MTJ sensoring including domain stable free layer |
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