Single crystal diamond prepared by CVD
A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
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creator | Martineau, Philip Maurice Dorn, Bärbel Susanne Cha Whitehead, Andrew John Collins, John Lloyd Sussmann, Ricardo Simon Scarsbrook, Geoffrey Alan Twitchen, Daniel James |
description | A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1983080B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1983080B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1983080B13</originalsourceid><addsrcrecordid>eNrjZFALzsxLz0lVSC6qLC5JzFFIyUzMzc9LUSgoSi1ILEpNUUiqVHAOc-FhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAYaWFsYGFgZOhsZEKAEA898mnA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Single crystal diamond prepared by CVD</title><source>esp@cenet</source><creator>Martineau, Philip Maurice ; Dorn, Bärbel Susanne Cha ; Whitehead, Andrew John ; Collins, John Lloyd ; Sussmann, Ricardo Simon ; Scarsbrook, Geoffrey Alan ; Twitchen, Daniel James</creator><creatorcontrib>Martineau, Philip Maurice ; Dorn, Bärbel Susanne Cha ; Whitehead, Andrew John ; Collins, John Lloyd ; Sussmann, Ricardo Simon ; Scarsbrook, Geoffrey Alan ; Twitchen, Daniel James</creatorcontrib><description>A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.</description><language>eng ; fre ; ger</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MEASUREMENT OF NUCLEAR OR X-RADIATION ; MEASURING ; METALLURGY ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TESTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170201&DB=EPODOC&CC=EP&NR=1983080B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170201&DB=EPODOC&CC=EP&NR=1983080B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Martineau, Philip Maurice</creatorcontrib><creatorcontrib>Dorn, Bärbel Susanne Cha</creatorcontrib><creatorcontrib>Whitehead, Andrew John</creatorcontrib><creatorcontrib>Collins, John Lloyd</creatorcontrib><creatorcontrib>Sussmann, Ricardo Simon</creatorcontrib><creatorcontrib>Scarsbrook, Geoffrey Alan</creatorcontrib><creatorcontrib>Twitchen, Daniel James</creatorcontrib><title>Single crystal diamond prepared by CVD</title><description>A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MEASUREMENT OF NUCLEAR OR X-RADIATION</subject><subject>MEASURING</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TESTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFALzsxLz0lVSC6qLC5JzFFIyUzMzc9LUSgoSi1ILEpNUUiqVHAOc-FhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAYaWFsYGFgZOhsZEKAEA898mnA</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Martineau, Philip Maurice</creator><creator>Dorn, Bärbel Susanne Cha</creator><creator>Whitehead, Andrew John</creator><creator>Collins, John Lloyd</creator><creator>Sussmann, Ricardo Simon</creator><creator>Scarsbrook, Geoffrey Alan</creator><creator>Twitchen, Daniel James</creator><scope>EVB</scope></search><sort><creationdate>20170201</creationdate><title>Single crystal diamond prepared by CVD</title><author>Martineau, Philip Maurice ; Dorn, Bärbel Susanne Cha ; Whitehead, Andrew John ; Collins, John Lloyd ; Sussmann, Ricardo Simon ; Scarsbrook, Geoffrey Alan ; Twitchen, Daniel James</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1983080B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MEASUREMENT OF NUCLEAR OR X-RADIATION</topic><topic>MEASURING</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TESTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Martineau, Philip Maurice</creatorcontrib><creatorcontrib>Dorn, Bärbel Susanne Cha</creatorcontrib><creatorcontrib>Whitehead, Andrew John</creatorcontrib><creatorcontrib>Collins, John Lloyd</creatorcontrib><creatorcontrib>Sussmann, Ricardo Simon</creatorcontrib><creatorcontrib>Scarsbrook, Geoffrey Alan</creatorcontrib><creatorcontrib>Twitchen, Daniel James</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martineau, Philip Maurice</au><au>Dorn, Bärbel Susanne Cha</au><au>Whitehead, Andrew John</au><au>Collins, John Lloyd</au><au>Sussmann, Ricardo Simon</au><au>Scarsbrook, Geoffrey Alan</au><au>Twitchen, Daniel James</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Single crystal diamond prepared by CVD</title><date>2017-02-01</date><risdate>2017</risdate><abstract>A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.</abstract><oa>free_for_read</oa></addata></record> |
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language | eng ; fre ; ger |
recordid | cdi_epo_espacenet_EP1983080B1 |
source | esp@cenet |
subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Single crystal diamond prepared by CVD |
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