ALTERNATE ROW-BASED READING AND WRITING FOR NON-VOLATILE MEMORY

A set of storage elements is programmed beginning with a word line WLn adjacent a select gate line for the set. After programming the first word line, the next word line WLn+ 1 adjacent to the first word line is skipped and the next word line WLn+2 adjacent to WLn+ 1 is programmed. WLn+ 1 is then pr...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	GUTERMAN, DANIEL, C
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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