Semiconductor heterostructure

The present invention relates to a semiconductor heterostructure comprising a support substrate with a first in-plane lattice parameter, a buffer structure formed on the support substrate and having on top in a relaxed state a second in-plane lattice parameter, and a multi-layer stack of ungraded la...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FIGUET, CHRISTOPHE, AULNETTE, CECILE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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