REPLACEMENT GATE FIELD EFFECT TRANSISTOR WITH GERMANIUM OR SIGE CHANNEL AND MANUFACTURING METHOD FOR SAME USING GAS-CLUSTER ION IRRADIATION

REPLACEMENT GATE FIELD EFFECT TRANSISTOR WITH GERMANIUM OR SIGE CHANNEL AND MANUFACTURING METHOD FOR SAME USING GAS-CLUSTER ION IRRADIATION

A self-aligned MISFET transistor ( 500 H) on a silicon substrate ( 502 ), but having a graded SiGe channel or a Ge channel. The channel ( 526 ) is formed using gas-cluster ion beam ( 524 ) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing met...

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Hauptverfasser: BORLAND, JOHN O, SKINNER, WESLEY J
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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SKINNER, WESLEY J
description A self-aligned MISFET transistor ( 500 H) on a silicon substrate ( 502 ), but having a graded SiGe channel or a Ge channel. The channel ( 526 ) is formed using gas-cluster ion beam ( 524 ) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based on a replacement gate process flow augmented with a gas-cluster ion beam processing step or steps to form the SiGe or Ge channel. The channel may also be doped by gas-cluster ion beam processing either as an auxiliary step or simultaneously with formation of the increased mobility channel.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title REPLACEMENT GATE FIELD EFFECT TRANSISTOR WITH GERMANIUM OR SIGE CHANNEL AND MANUFACTURING METHOD FOR SAME USING GAS-CLUSTER ION IRRADIATION
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