BURIED CONDUCTOR FOR IMAGERS
A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at leas...
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description | A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material. |
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The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. 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A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJBxCg3ydHVRcPb3cwl1DvEPUnADYk9fR3fXoGAeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhLvGmBoYWluaGLoZGhMhBIAMIsgZg</recordid><startdate>20190612</startdate><enddate>20190612</enddate><creator>RHODES, Howard, E</creator><scope>EVB</scope></search><sort><creationdate>20190612</creationdate><title>BURIED CONDUCTOR FOR IMAGERS</title><author>RHODES, Howard, E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1897141B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RHODES, Howard, E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RHODES, Howard, E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BURIED CONDUCTOR FOR IMAGERS</title><date>2019-06-12</date><risdate>2019</risdate><abstract>A pixel cell having a photo-conversion device at a surface of a substrate and at least one contact area from which charge or a signal is output or received. A first insulating layer is located over the photo-conversion device and the at least one contact area. The pixel cell further includes at least one conductor in contact with the at least one contact area. The conductor includes a polysilicon material extending through the first insulating layer and in contact with the at least one contact area. Further, a conductive material, which includes at least one of a silicide and a refractory metal, can be over and in contact with the polysilicon material.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | BURIED CONDUCTOR FOR IMAGERS |
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