TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT
A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second a...
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creator | ZWALD, MARK STINE, BRIAN TONELLO, STEFANO KITCH, VICTOR |
description | A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1891661A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1891661A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1891661A13</originalsourceid><addsrcrecordid>eNrjZNALcQ0OUXB29fEJVnDzD1IIdvX1dPb3cwl1DgHyIj1dfVwUPH0DgvzDXH1d_UJ4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4ChhaWhmZmho6ExEUoAs-Ylow</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT</title><source>esp@cenet</source><creator>ZWALD, MARK ; STINE, BRIAN ; TONELLO, STEFANO ; KITCH, VICTOR</creator><creatorcontrib>ZWALD, MARK ; STINE, BRIAN ; TONELLO, STEFANO ; KITCH, VICTOR</creatorcontrib><description>A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080227&DB=EPODOC&CC=EP&NR=1891661A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080227&DB=EPODOC&CC=EP&NR=1891661A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZWALD, MARK</creatorcontrib><creatorcontrib>STINE, BRIAN</creatorcontrib><creatorcontrib>TONELLO, STEFANO</creatorcontrib><creatorcontrib>KITCH, VICTOR</creatorcontrib><title>TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT</title><description>A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALcQ0OUXB29fEJVnDzD1IIdvX1dPb3cwl1DgHyIj1dfVwUPH0DgvzDXH1d_UJ4GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakm8a4ChhaWhmZmho6ExEUoAs-Ylow</recordid><startdate>20080227</startdate><enddate>20080227</enddate><creator>ZWALD, MARK</creator><creator>STINE, BRIAN</creator><creator>TONELLO, STEFANO</creator><creator>KITCH, VICTOR</creator><scope>EVB</scope></search><sort><creationdate>20080227</creationdate><title>TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT</title><author>ZWALD, MARK ; STINE, BRIAN ; TONELLO, STEFANO ; KITCH, VICTOR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1891661A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZWALD, MARK</creatorcontrib><creatorcontrib>STINE, BRIAN</creatorcontrib><creatorcontrib>TONELLO, STEFANO</creatorcontrib><creatorcontrib>KITCH, VICTOR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZWALD, MARK</au><au>STINE, BRIAN</au><au>TONELLO, STEFANO</au><au>KITCH, VICTOR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT</title><date>2008-02-27</date><risdate>2008</risdate><abstract>A test cell for localizing defects includes a first active region, a second active region formed substantially parallel to the first active region, a third active region formed substantially parallel to the first and second active regions, a fourth active region formed between the first and second active regions, and a fifth active region formed between the second and third active regions. The fourth and fifth active regions are formed adjacent to opposite end portions of the second active region. The fourth and fifth active regions are also formed substantially perpendicular to the second active region.</abstract><oa>free_for_read</oa></addata></record> |
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language | eng ; fre ; ger |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
title | TEST CELLS FOR SEMICONDUCTOR YIELD IMPROVEMENT |
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