HIGH-DENSITY NONVOLATILE MEMORY ARRAY FABRICATED AT LOW TEMPERATURE COMPRISING SEMICONDUCTOR DIODES

A memory cell is described suitable for use in a high-density monolithic three dimensional memory array. In preferred embodiments of the memory cell, a semiconductor junction diode formed of germanium or a germanium alloy which can be crystallized at relatively low temperature is formed disposed bet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HERNER, S. BRAD, DUNTON, SAMUEL V
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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