SEMICONDUCTOR HETEROSTRUCTURE

A strained semiconductor heterostructure (10) comprises an injection region comprising a first emitter layer (11) and a second emitter layer (12) and a light generation layer (13) positioned between the emitter layers (11, 12). An electron capture region (14) is positioned between the light generati...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ODNOBLYUDOV, MAXIM, BOUGROV, VLADISLA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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