METHOD FOR BILAYER RESIST PLASMA ETCH
A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma i...
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| creator | NGUYEN, WENDY LEE, CHRIS |
| description | A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched. |
| format | Patent |
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| language | eng ; fre ; ger |
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| subjects | AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CABLES CINEMATOGRAPHY CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INSULATORS PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES |
| title | METHOD FOR BILAYER RESIST PLASMA ETCH |
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