SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION

SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION

Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguid...

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Hauptverfasser: RATOWSKY, Richard, P, ENG, Lars, VERMA, Ashish, K
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Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator RATOWSKY, Richard, P
ENG, Lars
VERMA, Ashish, K
description Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP1766739B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP1766739B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP1766739B13</originalsourceid><addsrcrecordid>eNrjZNALdvX1dPb3cwl1DvEPUvBxDHYNUgj3DPFQCPZ0cVXw9QcSwaEBAUGuwcGe_n48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDQ3MzM3NjSydCYCCUAuUsltA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION</title><source>esp@cenet</source><creator>RATOWSKY, Richard, P ; ENG, Lars ; VERMA, Ashish, K</creator><creatorcontrib>RATOWSKY, Richard, P ; ENG, Lars ; VERMA, Ashish, K</creatorcontrib><description>Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171220&amp;DB=EPODOC&amp;CC=EP&amp;NR=1766739B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171220&amp;DB=EPODOC&amp;CC=EP&amp;NR=1766739B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RATOWSKY, Richard, P</creatorcontrib><creatorcontrib>ENG, Lars</creatorcontrib><creatorcontrib>VERMA, Ashish, K</creatorcontrib><title>SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION</title><description>Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALdvX1dPb3cwl1DvEPUvBxDHYNUgj3DPFQCPZ0cVXw9QcSwaEBAUGuwcGe_n48DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDQ3MzM3NjSydCYCCUAuUsltA</recordid><startdate>20171220</startdate><enddate>20171220</enddate><creator>RATOWSKY, Richard, P</creator><creator>ENG, Lars</creator><creator>VERMA, Ashish, K</creator><scope>EVB</scope></search><sort><creationdate>20171220</creationdate><title>SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION</title><author>RATOWSKY, Richard, P ; ENG, Lars ; VERMA, Ashish, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1766739B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>RATOWSKY, Richard, P</creatorcontrib><creatorcontrib>ENG, Lars</creatorcontrib><creatorcontrib>VERMA, Ashish, K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RATOWSKY, Richard, P</au><au>ENG, Lars</au><au>VERMA, Ashish, K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION</title><date>2017-12-20</date><risdate>2017</risdate><abstract>Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer with multiple layers is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title SEMICONDUCTOR LASER WITH SIDE MODE SUPPRESSION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T01%3A25%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RATOWSKY,%20Richard,%20P&rft.date=2017-12-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP1766739B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true