CONCURRENT PROGRAMMING OF NON-VOLATILE MEMORY

CONCURRENT PROGRAMMING OF NON-VOLATILE MEMORY

One embodiment of the present invention includes applying a first value to a bit line, boosting word lines associated with the bit line and a common selection line to create a first condition based on the first value, and cutting off a boundary non-volatile storage element associated with the common...

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1. Verfasser: GUTERMAN, DANIEL, C
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator GUTERMAN, DANIEL, C
description One embodiment of the present invention includes applying a first value to a bit line, boosting word lines associated with the bit line and a common selection line to create a first condition based on the first value, and cutting off a boundary non-volatile storage element associated with the common selection line to maintain the first condition for a particular non-volatile storage element associated with the bit line and common selection line. A second value is applied to the bit line and at least a subset of the word lines are boosted to create a second condition for a different non-volatile storage element associated with the bit line and common selection line. The second condition is based on the second value. The first condition and the second condition overlap in time. Both non-volatile storage elements are programmed concurrently, based on their associated conditions.
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A second value is applied to the bit line and at least a subset of the word lines are boosted to create a second condition for a different non-volatile storage element associated with the bit line and common selection line. The second condition is based on the second value. The first condition and the second condition overlap in time. 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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title CONCURRENT PROGRAMMING OF NON-VOLATILE MEMORY
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