Light emitting semiconductor chip with diffision barrier
The chip has a layer sequence (8) of undoped layers (4-7) that are arranged between an active layer (3) and a p-doped layer (9). The undoped layer (5) is joined to the undoped layer (6), where the layers (5, 6) contain aluminium. The layers (5, 6) have aluminium portions, where the portion of the la...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | The chip has a layer sequence (8) of undoped layers (4-7) that are arranged between an active layer (3) and a p-doped layer (9). The undoped layer (5) is joined to the undoped layer (6), where the layers (5, 6) contain aluminium. The layers (5, 6) have aluminium portions, where the portion of the layer (5) is larger than the portion of the layer (6). The sequence acts as a diffusion barrier for the dopant of the p-doped layer. |
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