Method of making a semiconductor device

A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MILLER, MELVY F, ZURCHER, PETER, REMMEL, THOMAS P, KALPAT, SRIRAM
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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