Method of making a semiconductor device

Method of making a semiconductor device

A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and...

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Hauptverfasser: MILLER, MELVY F, ZURCHER, PETER, REMMEL, THOMAS P, KALPAT, SRIRAM
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MILLER, MELVY F
ZURCHER, PETER
REMMEL, THOMAS P
KALPAT, SRIRAM
description A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and a first number of dielectric layers. The second capacitor comprises the layer of electrode material and a second number of dielectric layers. The first number of dielectric layers is greater than he second number of dielectric layers such that the first capacitor has a higher capacitance per unit area than does the second capacitor.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of making a semiconductor device
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