Hot-melt underfill composition and method of application
This invention provides a process for applying a wafer level underfill comprising: providing a solvent-free hot-melt underfill composition; melting the underfill; applying the underfill in a uniform layer to the active side of a semiconductor wafer; returning the underfill to a solid state; optional...
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creator | SHENFIELD, DAVID CHAWARE, RAGHUNANDAN RAMESH HE, XIPING |
description | This invention provides a process for applying a wafer level underfill comprising: providing a solvent-free hot-melt underfill composition; melting the underfill; applying the underfill in a uniform layer to the active side of a semiconductor wafer; returning the underfill to a solid state; optionally B-staging the underfill; optionally removing any excess underfill from the bumps on the wafer; and dicing the wafer into individual dies. |
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melting the underfill; applying the underfill in a uniform layer to the active side of a semiconductor wafer; returning the underfill to a solid state; optionally B-staging the underfill; optionally removing any excess underfill from the bumps on the wafer; and dicing the wafer into individual dies.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060628&DB=EPODOC&CC=EP&NR=1675167A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060628&DB=EPODOC&CC=EP&NR=1675167A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHENFIELD, DAVID</creatorcontrib><creatorcontrib>CHAWARE, RAGHUNANDAN RAMESH</creatorcontrib><creatorcontrib>HE, XIPING</creatorcontrib><title>Hot-melt underfill composition and method of application</title><description>This invention provides a process for applying a wafer level underfill comprising: providing a solvent-free hot-melt underfill composition; melting the underfill; applying the underfill in a uniform layer to the active side of a semiconductor wafer; returning the underfill to a solid state; optionally B-staging the underfill; optionally removing any excess underfill from the bumps on the wafer; and dicing the wafer into individual dies.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwyC_RzU3NKVEozUtJLUrLzMlRSM7PLcgvzizJzM9TSMxLUchNLcnIT1HIT1NILCjIyUxOBMnwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JJ41wBDM3NTIHY0NCZCCQDHhy4p</recordid><startdate>20060628</startdate><enddate>20060628</enddate><creator>SHENFIELD, DAVID</creator><creator>CHAWARE, RAGHUNANDAN RAMESH</creator><creator>HE, XIPING</creator><scope>EVB</scope></search><sort><creationdate>20060628</creationdate><title>Hot-melt underfill composition and method of application</title><author>SHENFIELD, DAVID ; CHAWARE, RAGHUNANDAN RAMESH ; HE, XIPING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1675167A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHENFIELD, DAVID</creatorcontrib><creatorcontrib>CHAWARE, RAGHUNANDAN RAMESH</creatorcontrib><creatorcontrib>HE, XIPING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHENFIELD, DAVID</au><au>CHAWARE, RAGHUNANDAN RAMESH</au><au>HE, XIPING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hot-melt underfill composition and method of application</title><date>2006-06-28</date><risdate>2006</risdate><abstract>This invention provides a process for applying a wafer level underfill comprising: providing a solvent-free hot-melt underfill composition; melting the underfill; applying the underfill in a uniform layer to the active side of a semiconductor wafer; returning the underfill to a solid state; optionally B-staging the underfill; optionally removing any excess underfill from the bumps on the wafer; and dicing the wafer into individual dies.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Hot-melt underfill composition and method of application |
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