METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FORM CMOS GATES HAVING A HIGH-K GATE DIELECTRIC AND RELATED STRUCTURE

According to one exemplary embodiment, a method for integrating first and second metal layers on a substrate to form a dual metal NMOS gate and PMOS gate comprises depositing a dielectric layer over an NMOS region and a PMOS region of the substrate. The method further comprises depositing the first...

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Hauptverfasser:	ZHONG, HUICAI, GOO, JUNG-SUK, JEON, JOONG, S, KLUTH, GEORGE, JONATHAN, HOLBROOK, ALLISON, KAY, XIANG, QI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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