Composition for removing a photoresist residue and polymer residue, and residue removal process using the same

Composition for removing a photoresist residue and polymer residue, and residue removal process using the same

A composition for removing a photoresist residue and polymer residue to remove a photoresist residue and an ashing residue remaining after dry etching and after ashing of a semiconductor substrate having metal wiring formed from aluminum or an aluminum alloy is provided, the composition containing a...

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Hauptverfasser: OOWADA, TAKUO, HATA, KISATO
Format: Patent
Sprache:eng ; fre ; ger
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APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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creator OOWADA, TAKUO
HATA, KISATO
description A composition for removing a photoresist residue and polymer residue to remove a photoresist residue and an ashing residue remaining after dry etching and after ashing of a semiconductor substrate having metal wiring formed from aluminum or an aluminum alloy is provided, the composition containing at least one type of fluorine compound (excluding hydrofluoric acid), at least one type of sulfonic acid, and water.
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title Composition for removing a photoresist residue and polymer residue, and residue removal process using the same
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