POSITIVE RESIST COMPOSITION AND METHOD OF FORMATION OF RESIST PATTERNS
The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhib...
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| creator | ISHIKAWA, KIYOSHI HOJO, TAKUMA |
| description | The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (a1) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (a1) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below:
(wherein, R is a hydrogen atom or methyl group, R 1 is an alkyl group having 1 to 5 carbon atoms, R 2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.) |
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(wherein, R is a hydrogen atom or methyl group, R 1 is an alkyl group having 1 to 5 carbon atoms, R 2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)</description><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091223&DB=EPODOC&CC=EP&NR=1619553A4$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20091223&DB=EPODOC&CC=EP&NR=1619553A4$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISHIKAWA, KIYOSHI</creatorcontrib><creatorcontrib>HOJO, TAKUMA</creatorcontrib><title>POSITIVE RESIST COMPOSITION AND METHOD OF FORMATION OF RESIST PATTERNS</title><description>The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (a1) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (a1) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below:
(wherein, R is a hydrogen atom or methyl group, R 1 is an alkyl group having 1 to 5 carbon atoms, R 2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAL8A_2DPEMc1UIcg32DA5RcPb3hQj5-yk4-rko-LqGePi7KPi7Kbj5B_k6gsWBHKjqAMeQENcgv2AeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhLvGmBoZmhpamrsaGJMhBIAiTQsUA</recordid><startdate>20091223</startdate><enddate>20091223</enddate><creator>ISHIKAWA, KIYOSHI</creator><creator>HOJO, TAKUMA</creator><scope>EVB</scope></search><sort><creationdate>20091223</creationdate><title>POSITIVE RESIST COMPOSITION AND METHOD OF FORMATION OF RESIST PATTERNS</title><author>ISHIKAWA, KIYOSHI ; HOJO, TAKUMA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1619553A43</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2009</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>ISHIKAWA, KIYOSHI</creatorcontrib><creatorcontrib>HOJO, TAKUMA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ISHIKAWA, KIYOSHI</au><au>HOJO, TAKUMA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POSITIVE RESIST COMPOSITION AND METHOD OF FORMATION OF RESIST PATTERNS</title><date>2009-12-23</date><risdate>2009</risdate><abstract>The invention provides a positive resist composition which has high etching resistance and attains high resolution, and a method of forming patterns by using the positive resist composition. The positive resist composition contains a resin component (A), which has acid dissociable, dissolution inhibiting groups, and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) is a polymer comprising structural units (a1) represented by the general formula (I) shown below, and a portion of the hydroxyl groups of the units (a1) are protected by replacing the hydrogen atoms of the hydroxyl groups with acid dissociable, dissolution inhibiting groups represented by the general formula (II) shown below:
(wherein, R is a hydrogen atom or methyl group, R 1 is an alkyl group having 1 to 5 carbon atoms, R 2 is an alkyl group having 1 to 5 carbon atoms or a hydrogen atom, and X is an aliphatic polycyclic group having 10 to 16 carbon atoms or an aromatic polycyclic hydrocarbon group having 10 to 16 carbon atoms.)</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | POSITIVE RESIST COMPOSITION AND METHOD OF FORMATION OF RESIST PATTERNS |
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