Method and apparatus for determining generation lifetime of product semiconductor wafers

To determine the generation lifetime of a pn junction of a semiconductor wafer, an elastically deformable, electrically conductive contact is caused to touch a surface of the semiconductor wafer over the pn junction. At least one reverse bias voltage is applied to the pn junction via the contact and...

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1. Verfasser:	HILLARD, ROBERT J
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	HILLARD, ROBERT J
description	To determine the generation lifetime of a pn junction of a semiconductor wafer, an elastically deformable, electrically conductive contact is caused to touch a surface of the semiconductor wafer over the pn junction. At least one reverse bias voltage is applied to the pn junction via the contact and a value of current flowing in the contact in response to the application of each reverse bias voltage is measured. The generation lifetime of the pn junction is then determined from a subset of the values of the reverse bias voltage and the corresponding values of measured current.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
title	Method and apparatus for determining generation lifetime of product semiconductor wafers
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