Apparatus and method for surface finishing a silicon film

A method for treating a surface of a substrate, said method comprising: providing a chamber with central and outside gas inlet zones, wherein the gas flow rate in each gas inlet zone is independently controllable; providing a substrate within said chamber, said substrate comprising a cleaved surface...

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Bibliographische Detailangaben
Hauptverfasser: COMITA, PAUL B, SCUDDER, LANCE A, RILEY, NORMA B, THILDERKVIST, ANNALENA
Format: Patent
Sprache:eng ; fre ; ger
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