HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY
The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid gene...
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| creator | LANG, ROTBERT N MEDEIROS, DAVID, E PETRILLO, KAREN, E HUANG, WU-SONG ANGELOPOULOS, MARIE MOREAU, WAYNE LI, WENJIE |
| description | The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well. |
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The resist compositions may be useful in other lithographic processes as well.</description><language>eng ; fre ; ger</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100811&DB=EPODOC&CC=EP&NR=1586005B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100811&DB=EPODOC&CC=EP&NR=1586005B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LANG, ROTBERT N</creatorcontrib><creatorcontrib>MEDEIROS, DAVID, E</creatorcontrib><creatorcontrib>PETRILLO, KAREN, E</creatorcontrib><creatorcontrib>HUANG, WU-SONG</creatorcontrib><creatorcontrib>ANGELOPOULOS, MARIE</creatorcontrib><creatorcontrib>MOREAU, WAYNE</creatorcontrib><creatorcontrib>LI, WENJIE</creatorcontrib><title>HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY</title><description>The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD28HT3UAh29Qv2DPEM8wyJVAhyDfYMDlFw9vcN8AcJ-vsFK7j5Bym4-rg6hwT5--k6OQa7uij4eIZ4-LsHOQZ4RPIwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUknjXAENTCzMDA1MnQ2MilAAAIPorrA</recordid><startdate>20100811</startdate><enddate>20100811</enddate><creator>LANG, ROTBERT N</creator><creator>MEDEIROS, DAVID, E</creator><creator>PETRILLO, KAREN, E</creator><creator>HUANG, WU-SONG</creator><creator>ANGELOPOULOS, MARIE</creator><creator>MOREAU, WAYNE</creator><creator>LI, WENJIE</creator><scope>EVB</scope></search><sort><creationdate>20100811</creationdate><title>HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY</title><author>LANG, ROTBERT N ; MEDEIROS, DAVID, E ; PETRILLO, KAREN, E ; HUANG, WU-SONG ; ANGELOPOULOS, MARIE ; MOREAU, WAYNE ; LI, WENJIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP1586005B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2010</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>LANG, ROTBERT N</creatorcontrib><creatorcontrib>MEDEIROS, DAVID, E</creatorcontrib><creatorcontrib>PETRILLO, KAREN, E</creatorcontrib><creatorcontrib>HUANG, WU-SONG</creatorcontrib><creatorcontrib>ANGELOPOULOS, MARIE</creatorcontrib><creatorcontrib>MOREAU, WAYNE</creatorcontrib><creatorcontrib>LI, WENJIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LANG, ROTBERT N</au><au>MEDEIROS, DAVID, E</au><au>PETRILLO, KAREN, E</au><au>HUANG, WU-SONG</au><au>ANGELOPOULOS, MARIE</au><au>MOREAU, WAYNE</au><au>LI, WENJIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY</title><date>2010-08-11</date><risdate>2010</risdate><abstract>The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY |
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